Discrete Semiconductor Products

QS120SCM80D2P

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1200V N-CHANNEL SIC MOSFET 80 M

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Discrete Semiconductor Products

Active

1200V N-CHANNEL SIC MOSFET 80 M

Technical Specifications

Parameters and characteristics for this part

Specification	QS120SCM80D2P

Drain to Source Voltage (Vdss)	1.2 kV
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	60 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	1001 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-263CA, D2PAK (7 Leads + Tab), TO-263-8
Power Dissipation (Max)	250 W
Rds On (Max) @ Id, Vgs	100 mOhm
Supplier Device Package	D2PAK-7L
Vgs (Max) [Max]	25 V
Vgs (Max) [Min]	-10 V
Vgs(th) (Max) @ Id	3.8 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	1000	$ 9.25

General part information

1200V N-CHANNEL SIC MOSFET 80 M

Technical documentation and resources