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QSD50HCS120U
Discrete Semiconductor Products

QSD50HCS120U

Active
Quest Semi

50AMP 1200V SIC HOMOGENEOUS SCHO

QSD50HCS120U
Discrete Semiconductor Products

QSD50HCS120U

Active
Quest Semi

50AMP 1200V SIC HOMOGENEOUS SCHO

Technical Specifications

Parameters and characteristics for this part

SpecificationQSD50HCS120U
Capacitance2380000 pF
Current - Average Rectified (Io)50 A
Current - Reverse Leakage40 µA
GradeAutomotive
Mounting TypeThrough Hole
Operating Temperature - Junction (Max)175 °C
Operating Temperature - Junction (Min)-55 °C
Package / CaseTO-220-2
Package NameTO-220-2L
QualificationAEC-Q101
Reverse Recovery Time (trr)0 ns
SpeedNo Recovery Time
Speed - Fast Recovery (Minimum)500 mA
Speed - Recovery Current500 mA, 500 mA
TechnologySiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max)1200 V
Voltage - Forward (Vf) (Max)1.7 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$Updated
DigikeyTube 10$ 5.65<4d
100$ 5.29
500$ 4.90

CAD

3D models and CAD resources for this part

Description

General part information

QSD50HCS120U

50AMP 1200V SIC HOMOGENEOUS SCHO

Documents

Technical documentation and resources

No documents available