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QSD10HCS120U
Discrete Semiconductor Products

QSD10HCS120U

Active
Quest Semi

1200V 10AMP SIC SCHOTTKY BARRIER

QSD10HCS120U
Discrete Semiconductor Products

QSD10HCS120U

Active
Quest Semi

1200V 10AMP SIC SCHOTTKY BARRIER

Technical Specifications

Parameters and characteristics for this part

SpecificationQSD10HCS120U
Capacitance770 pF
Current - Average Rectified (Io)10 A
Current - Reverse Leakage250 µA
Mounting TypeThrough Hole
Operating Temperature - Junction (Max)175 °C
Operating Temperature - Junction (Min)-55 °C
Package / CaseTO-220-2
Package NameTO-220-2
Reverse Recovery Time (trr)0 ns
SpeedNo Recovery Time
Speed - Fast Recovery (Minimum)500 mA
Speed - Recovery Current500 mA, 500 mA
TechnologySiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max)1200 V
Voltage - Forward (Vf) (Max)1.8 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$Updated
DigikeyTube 10$ 5.25<4d
100$ 4.12
500$ 3.99
1000$ 3.59

CAD

3D models and CAD resources for this part

Description

General part information

QSD10HCS120U

1200V 10AMP SIC SCHOTTKY BARRIER

Documents

Technical documentation and resources