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QS1700SCM8
Discrete Semiconductor Products

QS1700SCM8

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Quest Semi

1700V 8AMP SIC MOSFET

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QS1700SCM8
Discrete Semiconductor Products

QS1700SCM8

Active
Quest Semi

1700V 8AMP SIC MOSFET

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationQS1700SCM8
Current - Continuous Drain (Id) @ 25°C8 A
Drain to Source Voltage (Vdss)1700 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs16 nC
GradeAutomotive
Input Capacitance (Ciss) (Max) @ Vds142 pF
Mounting TypeThrough Hole
Operating Temperature [Max]175 °C
Operating Temperature [Min]-55 C
Package / CaseTO-247-3
Power Dissipation (Max) [Max]88 W
Rds On (Max) @ Id, Vgs100 mOhm
Supplier Device PackagePG-TO247-3
Vgs(th) (Max) @ Id4 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyN/A 2170$ 3.95

Description

General part information

QS1700SCM8

1700V 8AMP SIC MOSFET

Documents

Technical documentation and resources