Discrete Semiconductor Products

QS1200SCM36

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1200V 36AMP SIC MOSFET

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Discrete Semiconductor Products

Active

1200V 36AMP SIC MOSFET

Technical Specifications

Parameters and characteristics for this part

Specification	QS1200SCM36

Current - Continuous Drain (Id) @ 25°C	36 A
Drain to Source Voltage (Vdss)	1.2 kV
Drive Voltage (Max Rds On, Min Rds On)	2.8 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	60 nC
Grade	Automotive
Input Capacitance (Ciss) (Max) @ Vds [Max]	1001 pF
Mounting Type	Through Hole
Operating Temperature [Max]	175 °C
Operating Temperature [Min]	-55 C
Package / Case	TO-247-3
Power Dissipation (Max) [Max]	198 W
Rds On (Max) @ Id, Vgs	100 mOhm
Supplier Device Package	PG-TO247-3
Vgs (Max) [Max]	25 V
Vgs (Max) [Min]	-10 V
Vgs(th) (Max) @ Id	3.8 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	940	$ 1.25

General part information

1200V 36AMP SIC MOSFET

Technical documentation and resources