Technical Specifications
Parameters and characteristics for this part
| Specification | QS1200SCM36 |
|---|---|
| Current - Continuous Drain (Id) | 36 A |
| Drain to Source Voltage (Vdss) | 1200 V |
| Drive Voltage (Max Rds On, Min Rds On) | 2.8 V |
| FET Type | N-Channel |
| Gate Charge (Max) | 60 nC |
| Grade | Automotive |
| Input Capacitance (Ciss) (Max) | 1001 pF |
| Mounting Type | Through Hole |
| Operating Temperature (Max) | 175 °C |
| Operating Temperature (Min) | -55 °C |
| Package / Case | TO-247-3 |
| Package Name | PG-TO247-3 |
| Power Dissipation (Max) | 198 W |
| Rds On (Max) | 100 mOhm |
| Technology | SiCFET (Silicon Carbide) |
| Vgs (Max) Negative | -10 V |
| Vgs (Max) Positive | 25 V |
| Vgs(th) (Max) | 3.8 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | Updated |
|---|---|---|---|---|
| Digikey | Tube | 50 | $ 1.10 | <4d |
| 100 | $ 0.95 | |||
| 250 | $ 0.90 | |||
| 500 | $ 0.70 | |||
CAD
3D models and CAD resources for this part
Description
General part information
QS1200SCM36
1200V 36AMP SIC MOSFET
Documents
Technical documentation and resources