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QSD-10HCS500U
Discrete Semiconductor Products

QSD-10HCS500U

Active
Quest Semi

SIC SCHOTTKY DIODE 5000V 10A SOT

QSD-10HCS500U
Discrete Semiconductor Products

QSD-10HCS500U

Active
Quest Semi

SIC SCHOTTKY DIODE 5000V 10A SOT

Technical Specifications

Parameters and characteristics for this part

SpecificationQSD-10HCS500U
Capacitance3880 pF
Current - Average Rectified (Io)33 A
Current - Reverse Leakage600 µA
Mounting TypeThrough Hole
Operating Temperature - Junction (Max)175 °C
Operating Temperature - Junction (Min)-55 °C
Package / CaseTO-247-2
Package NameTO-247-2
Reverse Recovery Time (trr)0 ns
SpeedNo Recovery Time
Speed - Fast Recovery (Minimum)500 mA
Speed - Recovery Current500 mA, 500 mA
TechnologySiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max)5000 V
Voltage - Forward (Vf) (Max)1.9 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$Updated
DigikeyN/A 1957$ 165.0030d+

CAD

3D models and CAD resources for this part

Description

General part information

QSD-10HCS500U

SIC SCHOTTKY DIODE 5000V 10A SOT

Documents

Technical documentation and resources