Discrete Semiconductor Products

QS65SCM65D2P

Active

650V 65AMP SIC MOSFET D2PAK

Search across all available documentation for this part.

Discrete Semiconductor Products

Active

650V 65AMP SIC MOSFET D2PAK

Technical Specifications

Parameters and characteristics for this part

Specification	QS65SCM65D2P

Current - Continuous Drain (Id) @ 25°C	65 A
Drain to Source Voltage (Vdss)	650 V
Drive Voltage (Max Rds On, Min Rds On) [Max]	18 V
Drive Voltage (Max Rds On, Min Rds On) [Min]	20 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	105 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	1946 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-263CA, D2PAK (7 Leads + Tab), TO-263-8
Power Dissipation (Max)	294 W
Rds On (Max) @ Id, Vgs	70 mOhm
Supplier Device Package	D2PAK-7L
Vgs (Max) [Max]	25 V
Vgs (Max) [Min]	-10 V
Vgs(th) (Max) @ Id	5 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	980	$ 10.22

General part information

650V 65AMP SIC MOSFET D2PAK

Technical documentation and resources

No documents available