Technical Specifications
Parameters and characteristics for this part
| Specification | QS65SCM65D2P |
|---|---|
| Current - Continuous Drain (Id) (Tc) | 65 A |
| Drain to Source Voltage (Vdss) | 650 V |
| Drive Voltage (Max Rds On) | 18 V |
| Drive Voltage (Min Rds On) | 20 V |
| FET Type | N-Channel |
| Gate Charge (Max) | 105 nC, 105 nC |
| Input Capacitance (Ciss) (Max) | 1946 pF |
| Mounting Type | Surface Mount |
| Operating Temperature (Max) | 175 °C |
| Operating Temperature (Min) | -55 °C |
| Package Leads | 7 Leads |
| Package Name | D2PAK-7L, D2PAK |
| Power Dissipation (Max) | 294 W |
| Rds On (Max) | 70 mOhm |
| Technology | SiCFET (Silicon Carbide) |
| Vgs (Max) Negative | -10 V |
| Vgs (Max) Positive | 25 V |
| Vgs(th) (Max) | 5 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | Updated |
|---|---|---|---|---|
| Digikey | N/A | 980 | $ 10.22 | 30d+ |
CAD
3D models and CAD resources for this part
Description
General part information
QS65SCM65D2P
650V 65AMP SIC MOSFET D2PAK
Documents
Technical documentation and resources
No documents available