FDMS7692A Series

N-Channel Power Trench® MOSFET 30V, 26A, 5.5mΩ

Catalog

N-Channel Power Trench® MOSFET 30V, 26A, 5.5mΩ

Part	Drain to Source Voltage (Vdss)	Operating Temperature [Min]	Operating Temperature [Max]	Input Capacitance (Ciss) (Max) @ Vds	Vgs(th) (Max) @ Id	Power Dissipation (Max)	Drive Voltage (Max Rds On, Min Rds On)	FET Type	Rds On (Max) @ Id, Vgs	Supplier Device Package	Technology	Current - Continuous Drain (Id) @ 25°C	Gate Charge (Qg) (Max) @ Vgs [Max]	Package / Case	Vgs (Max)	Mounting Type	Gate Charge (Qg) (Max) @ Vgs	FET Feature	Configuration	Power - Max [Max]	Current - Continuous Drain (Id) @ 25°C [Min]	Current - Continuous Drain (Id) @ 25°C [Max]	Rds On (Max) @ Id, Vgs [Max]	Current - Continuous Drain (Id) @ 25°C
ON Semiconductor FDMS7698	30 V	-55 °C	150 °C	1605 pF	3 V	2.5 W 29 W	4.5 V 10 V	N-Channel	10 mOhm	8-PQFN (5x6)	MOSFET (Metal Oxide)	13.5 A 22 A	24 nC	8-PowerTDFN	20 V	Surface Mount
ON Semiconductor FDMS7606	30 V			1400 pF	3 V				11.4 mOhm	Power56	MOSFET (Metal Oxide)			8-PowerWDFN		Surface Mount	22 nC	Logic Level Gate	2 N-Channel (Dual)	1 W	11.5 A	12 A
ON Semiconductor FDMS7682	30 V	-55 °C	150 °C	1885 pF	3 V	2.5 W 33 W	4.5 V 10 V	N-Channel	6.3 mOhm	8-PQFN (5x6)	MOSFET (Metal Oxide)	16 A 22 A		8-PowerTDFN	20 V	Surface Mount	30 nC
ON Semiconductor FDMS7692	30 V	-55 °C	150 °C	1350 pF	3 V	2.5 W 27 W	4.5 V 10 V	N-Channel	7.5 mOhm	8-PQFN (5x6)	MOSFET (Metal Oxide)	14 A 28 A	22 nC	8-PowerTDFN	20 V	Surface Mount
ON Semiconductor FDMS7672AS	30 V	-55 °C	150 °C	2820 pF	3 V	2.5 W 46 W	4.5 V 10 V	N-Channel	4 mOhm	8-PQFN (5x6)	MOSFET (Metal Oxide)	19 A 42 A		8-PowerTDFN	20 V	Surface Mount	46 nC
ON Semiconductor FDMS7692A	30 V	-55 °C	150 °C	1350 pF	3 V	2.5 W 27 W	4.5 V 10 V	N-Channel	8 mOhm	8-PQFN (5x6)	MOSFET (Metal Oxide)	13.5 A 28 A	22 nC	8-PowerTDFN	20 V	Surface Mount
ON Semiconductor FDMS7672	30 V	-55 °C	150 °C	2960 pF	3 V	2.5 W 48 W	4.5 V 10 V	N-Channel		8-PQFN (5x6)	MOSFET (Metal Oxide)		44 nC	8-PowerTDFN	20 V	Surface Mount							5 mOhm
ON Semiconductor FDMS7678	30 V	-55 °C	150 °C	2410 pF	3 V	2.3 W 41 W	4.5 V 10 V	N-Channel	5.5 mOhm	8-PQFN (5x6)	MOSFET (Metal Oxide)	17.5 A	39 nC	8-PowerTDFN	20 V	Surface Mount								26 A
ON Semiconductor FDMS7698	30 V	-55 °C	150 °C	1605 pF	3 V	2.5 W 29 W	4.5 V 10 V	N-Channel	10 mOhm	8-PQFN (5x6)	MOSFET (Metal Oxide)	13.5 A 22 A	24 nC	8-PowerTDFN	20 V	Surface Mount

Catalog

N-Channel Power Trench® MOSFET 30V, 26A, 5.5mΩ

Key Features

• Max rDS(on)= 5.0 mΩat VGS= 10 V, ID= 19 A

• Max rDS(on)= 6.9 mΩ at VGS= 4.5 V, ID= 15 A

• Advanced Package and Silicon design for low rDS(on)and high efficiency

• Enhanced body diode, engineered for soft recovery, provides superior performance in synchronous buck converter applications

• MSL1 robust package design

• 100% UIL tested

• RoHS Compliant

Description

This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node ringing of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(on), fast switching speed and body diode reverse recovery performance.