FDMS8050ET30 Series

N-Channel PowerTrench® MOSFET 30V, 423A, 0.65mΩ

Catalog

N-Channel PowerTrench® MOSFET 30V, 423A, 0.65mΩ

Part	Drain to Source Voltage (Vdss)	Input Capacitance (Ciss) (Max) @ Vds	Drive Voltage (Max Rds On, Min Rds On)	Mounting Type	Package / Case	Power Dissipation (Max)	Supplier Device Package	Operating Temperature [Min]	Operating Temperature [Max]	Current - Continuous Drain (Id) @ 25°C	FET Type	Technology	Rds On (Max) @ Id, Vgs	Vgs (Max)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs
ON Semiconductor FDMS8050ET30	30 V	22610 pF	4.5 V 10 V	Surface Mount	8-PowerTDFN	3.3 W 180 W	8-PQFN (5x6)	-55 °C	175 ░C	55 A 423 A	N-Channel	MOSFET (Metal Oxide)	0.65 mOhm	20 V	3 V	285 nC

Catalog

N-Channel PowerTrench® MOSFET 30V, 423A, 0.65mΩ

Key Features

• Extended TJrating to 175°C

• Max rDS(on)= 0.65 mΩ at VGS= 10 V, ID= 55 A

• Max rDS(on)= 0.9 mΩ at VGS= 4.5 V, ID= 47 A

• Advanced Package and Silicon combination for low rDS(on)and high efficiency

• MSL1 robust package design

• 100% UIL tested

• RoHS Compliant

Description

This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node ringing of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge and extremely low rDS(on).