FDMS8018 Series

N-Channel PowerTrench® MOSFET 30V, 175A, 1.8mΩ

Catalog

N-Channel PowerTrench® MOSFET 30V, 175A, 1.8mΩ

Part	Vgs(th) (Max) @ Id	Operating Temperature [Min]	Operating Temperature [Max]	Power Dissipation (Max)	FET Type	Technology	Package / Case	Supplier Device Package	Drive Voltage (Max Rds On, Min Rds On)	Gate Charge (Qg) (Max) @ Vgs	Mounting Type	Current - Continuous Drain (Id) @ 25°C	Input Capacitance (Ciss) (Max) @ Vds	Drain to Source Voltage (Vdss)	Vgs (Max)	Rds On (Max) @ Id, Vgs
ON Semiconductor FDMS8018	3 V	-55 °C	150 °C	2.5 W 83 W	N-Channel	MOSFET (Metal Oxide)	8-PowerTDFN	8-PQFN (5x6)	4.5 V 10 V	61 nC	Surface Mount	30 A 120 A	5235 pF	30 V	20 V	1.8 mOhm

Catalog

N-Channel PowerTrench® MOSFET 30V, 175A, 1.8mΩ

Key Features

• Max rDS(on)= 1.8 mΩ at VGS= 10 V, ID= 30 A

• Max rDS(on)= 2.4 mΩ at VGS= 4.5 V, ID= 26 A

• Advanced Package and Silicon combination for low rDS(on)and high efficiency

• Next generation enhanced body diode technology, engineered for soft recovery

• MSL1 robust package design

• 100% UIL tested

• RoHS Compliant

Description

This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node ringing of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(on), fast switching speed ang body diode reverse recovery performance.