FDMS8025S Series

N-Channel PowerTrench® SyncFET™ 30V, 49A, 2.8mΩ

Catalog

N-Channel PowerTrench® SyncFET™ 30V, 49A, 2.8mΩ

Part	Supplier Device Package	Technology	Drain to Source Voltage (Vdss)	Package / Case	Input Capacitance (Ciss) (Max) @ Vds [Max]	FET Type	Vgs (Max)	Current - Continuous Drain (Id) @ 25°C	Power Dissipation (Max)	Vgs(th) (Max) @ Id	Mounting Type	Operating Temperature [Min]	Operating Temperature [Max]	Drive Voltage (Max Rds On, Min Rds On)
ON Semiconductor FDMS8025S	8-PQFN (5x6)	MOSFET (Metal Oxide)	30 V	8-PowerTDFN	3000 pF	N-Channel	20 V	24 A 49 A	2.5 W 50 W	3 V	Surface Mount	-55 °C	150 °C	4.5 V 10 V
ON Semiconductor FDMS8025S	8-PQFN (5x6)	MOSFET (Metal Oxide)	30 V	8-PowerTDFN	3000 pF	N-Channel	20 V	24 A 49 A	2.5 W 50 W	3 V	Surface Mount	-55 °C	150 °C	4.5 V 10 V
ON Semiconductor FDMS8025AS

Catalog

N-Channel PowerTrench® SyncFET™ 30V, 49A, 2.8mΩ

Key Features

• Max rDS(on)= 2.8 mΩ at VGS= 10 V, ID= 24 A

• Max rDS(on)= 3.5 mΩ at VGS= 4.5 V, ID= 21 A

• Advanced package and silicon combination for low rDS(on)and high efficiency

• SyncFET Schottky Body Diode

• MSL1 robust package design

• 100% UIL tested

• RoHS Compliant

Description

This part number is not recommended for new designs. Please apply NTMFS4C024NT1G as a replacement. The FDMS8025S has been designed to minimize losses in power conversion application. Advancements in both silicon and package technologies have been combined to offer the lowest rDS(on)while maintaining excellent switching performance.This device has the added benefit of an efficient monolithic Schottky body diode.