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ON Semiconductor

Series	Category	# Parts	Status	Description

Part	Spec A	Spec B	Spec C	Spec D	Description

Standalone parts(10272)

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Part	Category	Description
ON Semiconductor NCV8402AMNWT1G	Integrated Circuits (ICs)	SELF-PROTECTED N-CHANNEL POWER MOSFET/ REEL
ON Semiconductor 74AC32PCObsolete	Integrated Circuits (ICs)	IC GATE OR 4CH 2-INP 14MDIP
ON Semiconductor FGI3236-F085	Discrete Semiconductor Products	IGBT, 360V, 27A, 1.32V, 320MJ, TO-262<BR>ECOSPARK® I, N-CHANNEL IGNITION
ON Semiconductor FAN1655MTFXObsolete	Integrated Circuits (ICs)	IC REG CTRLR DDR 1OUT 16TSSOP
ON Semiconductor FIN1027MObsolete	Integrated Circuits (ICs)	LVDS DRIVER, LVDS DIFFERENTIAL DRIVER, -40 °C, 85 °C, 3 V, 3.6 V, SOIC
ON Semiconductor TMC2111AR3C	Integrated Circuits (ICs)	PIPELINE REGISTER, 8-BIT PQCC28
ON Semiconductor SLV4HC4053ADWRGObsolete	Integrated Circuits (ICs)	LDO REGULATOR, ULTRA-LOW NOISE,
ON Semiconductor FOD4218V	Isolators	OPTOCOUPLER, DIP, 6 PINS, 5 KV, NON ZERO CROSSING, 800 V, FOD4218 SERIES
ON Semiconductor NVMFD5483NLT1GObsolete	Discrete Semiconductor Products	DUAL N-CHANNEL POWER MOSFET 60V, 24A, 36MΩ
ON Semiconductor 2SD1804S-TL-E	Discrete Semiconductor Products	BIP NPN 8A 50V

Series	Category	# Parts	Status	Description

NTMFS7D5N15MCN-Channel Shielded Gate PowerTrench® MOSFET 150V, 95.6A, 7.9mΩ	FETs, MOSFETs	1	Active	This N-Channel MV MOSFET is produced using an advanced PowerTrench®process that incorporates Shielded Gate technology. This process has been optimized to minimize on-state resistance and yet maintain superior switching performance with best in class soft body diode.
NTMFS7D8N10GN-Channel Shielded Gate PowerTrench® MOSFET 100V, 110A, 7.6mΩ	FETs, MOSFETs	1	Active	This N-Channel MV MOSFET is produced using an advanced PowerTrench®process that incorporates Shielded Gate technology. This process has been optimized to minimize on-state resistance and yet maintain a wide safe operating area for ruggedness and robustness.
NTMFSC004N08MCN-Channel Dual Cool<sup>TM </sup> 56 PowerTrench<sup>®</sup> MOSFET 80V, ___A, 4.0mΩ	Single FETs, MOSFETs	1	Active	This N-Channel MOSFET is produced using ON Semiconductor’s advanced Power Trench®process. Advancements in both silicon and Dual Cool™ package technologies have been combined to offer the lowest rDS(on)while maintaining excellent switching performance by extremely low Junction-to-Ambient thermal resistance.
NTMFSC006N12MCN-Channel Dual CoolTM 56 PowerTrench® MOSFET 120 V, 92 A, 6.0mΩ	FETs, MOSFETs	1	Active	This N-Channel MOSFET is produced using onsemi’s advanced Power Trench®process. Advancements in both silicon and Dual Cool™ package technologies have been combined to offer the lowest RDS(on) while maintaining excellent switching performance by extremely low Junction-to-Ambient thermal resistance.
NTMFSC011N08M7N-Channel Dual CoolTM 56 PowerTrench® MOSFET 80V, 61A, 10mΩ	Discrete Semiconductor Products	1	Active	This N-Channel MOSFET is produced using an advanced Power Trench®process. Advancements in both silicon and Dual Cool™ package technologies have been combined to offer the lowest rDS(on)while maintaining excellent switching performance by extremely low Junction-to-Ambient thermal resistance.
NTMFSC012N15MCMOSFET - Power, Dualcool N-Channel, PQFN8, 150V, 11.4mΩ, 80A	Transistors	1	Active	This N-Channel MOSFET is produced using ON Semiconductor’s advanced Power Trench®process. Advancements in both silicon and Dual Cool™ package technologies have been combined to offer the lowest rDS(on)while maintaining excellent switching performance by extremely low Junction-to-Ambient thermal resistance.
NTMFSC0D8N04XMMOSFET - Power, Single N-Channel, DUAL COOL 40 V, 0.78mΩ, 310 A	Single FETs, MOSFETs	1	Active	The latest 40V standard gate level T10 Power MOSFET Technology with best-in-class On-Resistance for motor driver application. Lower On-Resistance and less gate charge can reduce conduction loss and driving loss. Good softness control for body diode reverse recovery can reduce voltage spike stress without extra snubber circuit in application.
NTMFSC1D0N04HLPower MOSFET , Single N-Channel, 40V / 1.0 mΩ, 288A, DualCool 56	FETs, MOSFETs	1	Obsolete	High performance Power MOSFET with advanced dual-side cooling package technology. Lower On-resistance to improve the condition loss and smaller junction capacitance to improve the switching loss. Specific to apply high switching frequency DC to DC conversion application.
NTMFSC1D6N06CLPower MOSFET, 60V N Channel 235A 1.5m Ohm in Dualcool56 package	Discrete Semiconductor Products	1	Active	This N-Channel MOSFET is produced using ON Semiconductor’s advanced Power Trench®process. Advancements in both silicon and Dual Cool™ package technologies have been combined to offer the lowest rDS(on)while maintaining excellent switching performance by extremely low Junction-to-Ambient thermal resistance.
NTMFSC1D9N06HLMOSFET - Power, Single, N-Channel, DUAL COOLTM, DFN8 5x6. 15, 60V, 1.9m, 199A	FETs, MOSFETs	1	Obsolete	This N-Channel MOSFET is produced using ON Semiconductor’s advanced Power Trench®process. Advancements in both silicon and Dual Cool™ package technologies have been combined to offer the lowest rDS(on)while maintaining excellent switching performance by extremely low Junction-to-Ambient thermal resistance.