NTMFSC012N15MC Series

MOSFET - Power, Dualcool N-Channel, PQFN8, 150V, 11.4mΩ, 80A

Catalog

MOSFET - Power, Dualcool N-Channel, PQFN8, 150V, 11.4mΩ, 80A

Part	Power Dissipation (Max)	Package / Case	Drain to Source Voltage (Vdss)	Supplier Device Package	Rds On (Max) @ Id, Vgs	Vgs (Max)	Current - Continuous Drain (Id) @ 25°C	Gate Charge (Qg) (Max) @ Vgs [Max]	Input Capacitance (Ciss) (Max) @ Vds	Technology	FET Type	Vgs(th) (Max) @ Id	Operating Temperature	Drive Voltage (Max Rds On, Min Rds On)	Mounting Type
ON Semiconductor NTMFSC012N15MC	2.7 W 147 W	8-PowerVDFN	150 V	8-DFN (5x6.15)	11.4 mOhm	20 V	10 A 80 A	32.4 nC	2490 pF	MOSFET (Metal Oxide)	N-Channel	4.5 V	150 °C	8 V 10 V	Surface Mount

Catalog

MOSFET - Power, Dualcool N-Channel, PQFN8, 150V, 11.4mΩ, 80A

Key Features

• Dual Cool™ Top Side Cooling PQFN package

• Max rDS(on)= 11.4 mΩ at VGS= 10 V, ID= 44 A

• Max rDS(on)= 14.5 mΩ at VGS= 8 V, ID= 22 A

• High performance technology for extremely low rDS(on)

• 100% UIL Tested

• RoHS Compliant

Description

This N-Channel MOSFET is produced using ON Semiconductor’s advanced Power Trench®process. Advancements in both silicon and Dual Cool™ package technologies have been combined to offer the lowest rDS(on)while maintaining excellent switching performance by extremely low Junction-to-Ambient thermal resistance.