NTMFSC004N08MC Series

N-Channel Dual CoolTM 56 PowerTrench® MOSFET 80V, ___A, 4.0mΩ

Catalog

N-Channel Dual CoolTM 56 PowerTrench® MOSFET 80V, ___A, 4.0mΩ

Part	Current - Continuous Drain (Id) @ 25°C	Supplier Device Package	Mounting Type	Gate Charge (Qg) (Max) @ Vgs	Power Dissipation (Max)	Drive Voltage (Max Rds On, Min Rds On)	Drain to Source Voltage (Vdss)	Input Capacitance (Ciss) (Max) @ Vds	Package / Case	Rds On (Max) @ Id, Vgs	Vgs (Max)	FET Type	Operating Temperature [Min]	Operating Temperature [Max]	Technology	Vgs(th) (Max) @ Id
ON Semiconductor NTMFSC004N08MC	86 A 136 A	8-DFN (5x6.15)	Surface Mount	43.4 nC	51 W 127 W	6 V 10 V	80 V	2980 pF	8-PowerVDFN	4 mOhm	20 V	N-Channel	-55 °C	150 °C	MOSFET (Metal Oxide)	4 V

Catalog

N-Channel Dual CoolTM 56 PowerTrench® MOSFET 80V, ___A, 4.0mΩ

Key Features

• Dual Cool™ Top Side Cooling PQFN package

• High performance technology for extremely low rDS(on)

• Max rDS(on)= 4.0 mΩ at VGS= 10 V, ID= 44 A

• Max rDS(on)= 8.5 mΩ at VGS= 6 V, ID= 22 A

• 100% UIL Tested

• RoHS Compliant

Description

This N-Channel MOSFET is produced using ON Semiconductor’s advanced Power Trench®process. Advancements in both silicon and Dual Cool™ package technologies have been combined to offer the lowest rDS(on)while maintaining excellent switching performance by extremely low Junction-to-Ambient thermal resistance.