NTMFSC011N08M7 Series

N-Channel Dual CoolTM 56 PowerTrench® MOSFET 80V, 61A, 10mΩ

Catalog

N-Channel Dual CoolTM 56 PowerTrench® MOSFET 80V, 61A, 10mΩ

Part	Drive Voltage (Max Rds On, Min Rds On)	Drain to Source Voltage (Vdss)	Package / Case	Rds On (Max) @ Id, Vgs	Gate Charge (Qg) (Max) @ Vgs [Max]	Supplier Device Package	FET Type	Current - Continuous Drain (Id) @ 25°C	Vgs(th) (Max) @ Id	Power Dissipation (Max)	Technology	Operating Temperature [Min]	Operating Temperature [Max]	Mounting Type	Vgs (Max)
ON Semiconductor NTMFSC011N08M7	10 V	80 V	8-PowerVDFN	10 mOhm	38 nC	8-DFN (5x6.15)	N-Channel	12.5 A 61 A	4.5 V	3.3 W 78.1 W	MOSFET (Metal Oxide)	-55 °C	150 °C	Surface Mount	20 V

Catalog

N-Channel Dual CoolTM 56 PowerTrench® MOSFET 80V, 61A, 10mΩ

Key Features

• Dual Cool™ Top Side Cooling PQFN package

• Max rDS(on)= 10 mΩ at VGS= 10 V, ID= 10 A

• High performance technology for extremely low rDS(on)

• 100% UIL Tested

• RoHS Compliant

Description

This N-Channel MOSFET is produced using an advanced Power Trench®process. Advancements in both silicon and Dual Cool™ package technologies have been combined to offer the lowest rDS(on)while maintaining excellent switching performance by extremely low Junction-to-Ambient thermal resistance.