NTMFSC1D9N06HL Series

MOSFET - Power, Single, N-Channel, DUAL COOLTM, DFN8 5x6. 15, 60V, 1.9m, 199A

Catalog

MOSFET - Power, Single, N-Channel, DUAL COOLTM, DFN8 5x6. 15, 60V, 1.9m, 199A

Part	Vgs(th) (Max) @ Id	Current - Continuous Drain (Id) @ 25°C	Operating Temperature [Min]	Operating Temperature [Max]	Drive Voltage (Max Rds On, Min Rds On)	Package / Case	Technology	Mounting Type	FET Type	Drain to Source Voltage (Vdss)	Vgs (Max)	Gate Charge (Qg) (Max) @ Vgs [Max]	Input Capacitance (Ciss) (Max) @ Vds	Power Dissipation (Max)	Supplier Device Package	Rds On (Max) @ Id, Vgs
ON Semiconductor NTMFSC1D9N06HL	2 V	30 A 199 A	-55 °C	175 ░C	4.5 V 10 V	8-PowerVDFN	MOSFET (Metal Oxide)	Surface Mount	N-Channel	60 V	20 V	64 nC	4910 pF	3.8 W 166 W	8-DFN (5x6.15)	1.9 mOhm

Catalog

MOSFET - Power, Single, N-Channel, DUAL COOLTM, DFN8 5x6. 15, 60V, 1.9m, 199A

Key Features

• Advanced Dual−Side Cooled Packaging

• Ultra Low RDS(on) to Minimize Conduction Losses

• MSL1 Robust Packaging Design

• Low Qg and Qoss to Minimize Charge Losses

• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant

Description

This N-Channel MOSFET is produced using ON Semiconductor’s advanced Power Trench®process. Advancements in both silicon and Dual Cool™ package technologies have been combined to offer the lowest rDS(on)while maintaining excellent switching performance by extremely low Junction-to-Ambient thermal resistance.