NTMFSC006N12MC Series

N-Channel Dual CoolTM 56 PowerTrench® MOSFET 120 V, 92 A, 6.0mΩ

Catalog

N-Channel Dual CoolTM 56 PowerTrench® MOSFET 120 V, 92 A, 6.0mΩ

Part	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Package / Case	Drain to Source Voltage (Vdss)	Vgs (Max)	Supplier Device Package	FET Type	Gate Charge (Qg) (Max) @ Vgs [Max]	Current - Continuous Drain (Id) @ 25°C	Mounting Type	Technology	Operating Temperature	Drive Voltage (Max Rds On, Min Rds On)
ON Semiconductor NTMFSC006N12MC	6.1 mOhm	4 V	8-PowerVDFN	120 V	20 V	8-DFN (5x6.15)	N-Channel	39 nC	14 A 92 A	Surface Mount	MOSFET (Metal Oxide)	150 °C	10 V

Catalog

N-Channel Dual CoolTM 56 PowerTrench® MOSFET 120 V, 92 A, 6.0mΩ

Key Features

• Dual Cool™ Top Side Cooling PQFN package

• Max rDS(on)= 6.1 mΩ at VGS= 10 V, ID= 44 A

• High performance technology for extremely low rDS(on)

• 100% UIL Tested

• RoHS Compliant

Description

This N-Channel MOSFET is produced using onsemi’s advanced Power Trench®process. Advancements in both silicon and Dual Cool™ package technologies have been combined to offer the lowest RDS(on) while maintaining excellent switching performance by extremely low Junction-to-Ambient thermal resistance.