NTMFSC1D6N06CL Series

Power MOSFET, 60V N Channel 235A 1.5m Ohm in Dualcool56 package

Catalog

Power MOSFET, 60V N Channel 235A 1.5m Ohm in Dualcool56 package

Part	Input Capacitance (Ciss) (Max) @ Vds	Vgs(th) (Max) @ Id	Vgs (Max)	Current - Continuous Drain (Id) @ 25°C	Technology	Operating Temperature [Min]	Operating Temperature [Max]	Mounting Type	Gate Charge (Qg) (Max) @ Vgs [Max] [custom]	Power Dissipation (Max)	Package / Case	Drain to Source Voltage (Vdss)	Supplier Device Package	FET Type
ON Semiconductor NTMFSC1D6N06CL	6660 pF	2 V	20 V	36 A 235 A	MOSFET (Metal Oxide)	-55 °C	150 °C	Surface Mount	91 nC	3.8 W 166 W	8-PowerVDFN	60 V	8-DFN (5x6.15)	N-Channel

Catalog

Power MOSFET, 60V N Channel 235A 1.5m Ohm in Dualcool56 package

Key Features

• Top and bottom sided exposed in standard 5x6mm pin-out

• Ultra low RDS-on

• Reduced capacitances and package inductance

Description

This N-Channel MOSFET is produced using ON Semiconductor’s advanced Power Trench®process. Advancements in both silicon and Dual Cool™ package technologies have been combined to offer the lowest rDS(on)while maintaining excellent switching performance by extremely low Junction-to-Ambient thermal resistance.