NTMFS7D8N10G Series

N-Channel Shielded Gate PowerTrench® MOSFET 100V, 110A, 7.6mΩ

Catalog

N-Channel Shielded Gate PowerTrench® MOSFET 100V, 110A, 7.6mΩ

Part	Drive Voltage (Max Rds On, Min Rds On)	Current - Continuous Drain (Id) @ 25°C	Supplier Device Package	Power Dissipation (Max)	Gate Charge (Qg) (Max) @ Vgs	Technology	FET Type	Operating Temperature [Min]	Operating Temperature [Max]	Drain to Source Voltage (Vdss)	Package / Case	Input Capacitance (Ciss) (Max) @ Vds	Mounting Type	Vgs(th) (Max) @ Id	Rds On (Max) @ Id, Vgs	Vgs (Max)
ON Semiconductor NTMFS7D8N10GTWG	10 V	14 A 110 A	8-PQFN (5x6)	3 W 187 W	92 nC	MOSFET (Metal Oxide)	N-Channel	-55 °C	175 ░C	100 V	8-PowerTDFN	6180 pF	Surface Mount	4 V	7.6 mOhm	20 V

Catalog

N-Channel Shielded Gate PowerTrench® MOSFET 100V, 110A, 7.6mΩ

Key Features

• Shielded Gate MOSFET Technology

• Max rDS(on)= 7.6 mΩ at VGS= 10 V, ID= 48 A

• MSL1 Robust Package Design

• 100% UIL Tested

• RoHS Compliant

• Wide SOA performance

Description

This N-Channel MV MOSFET is produced using an advanced PowerTrench®process that incorporates Shielded Gate technology. This process has been optimized to minimize on-state resistance and yet maintain a wide safe operating area for ruggedness and robustness.