M
Microchip Technology
| Series | Category | # Parts | Status | Description |
|---|---|---|---|---|
| Part | Spec A | Spec B | Spec C | Spec D | Description |
|---|---|---|---|---|---|
| Series | Category | # Parts | Status | Description |
|---|---|---|---|---|
| Part | Spec A | Spec B | Spec C | Spec D | Description |
|---|---|---|---|---|---|
| Part | Category | Description |
|---|---|---|
Microchip Technology | Crystals Oscillators Resonators | CMOS OUTPUT CLOCK OSCILLATOR, 24MHZ NOM |
Microchip Technology | Crystals Oscillators Resonators | MEMS OSC |
Microchip Technology | Integrated Circuits (ICs) | 1GHZ ARM CORTEX A7 W/ MIPI CAMERA AND 2GB INTEGRATED DDR3L |
Microchip Technology | Discrete Semiconductor Products | DIODE GEN PURP 100V 12A DO203AA |
Microchip Technology MSMBJ5372BLTB | Circuit Protection | VOLTAGE REGULATOR |
Microchip Technology | Integrated Circuits (ICs) | OPERATIONAL AMPLIFIER, 1 CHANNELS, 10 MHZ, 15 V/ΜS, 2.2V TO 5.5V, SOT-23, 5 PINS |
Microchip Technology LE9531CMQCTObsolete | Integrated Circuits (ICs) | IC TELECOM INTERFACE 28QFN |
Microchip Technology MCP2021-330E/MD-AE2VAOObsolete | Integrated Circuits (ICs) | IC TRANSCEIVER |
Microchip Technology | Integrated Circuits (ICs) | MCU 8-BIT PIC16 PIC RISC 3.5KB FLASH 3.3V/5V 18-PIN SOIC W TUBE |
Microchip Technology VCC6-LCF-212M500000Obsolete | Crystals Oscillators Resonators | DIFFERENTIAL XO +3.3 VDC +/-5% L |
| Series | Category | # Parts | Status | Description |
|---|---|---|---|---|
JAN2N6193-TransistorPNP Silicon Switching -100V, -5A | Bipolar (BJT) | 1 | Unknown | This specification covers the performance requirements for PNP silicon switching, 2N6193 transistors. Four levels of product assurance (JAN, JANTX, JANTXV and JANS) are provided for each encapsulated device type as specified in MIL-PRF-19500/561. Two levels of product assurance (JANHC and JANKC) are provided for each unencapsulated device type as specified in MIL-PRF-19500/561. Radiation hardness assurance (RHA) level designators "M", "D", "P", "L", "R", "F", "G", and "H" are appended to the device prefix to identify devices which have passed RHA requirements. Provisions for (RHA) to two radiation levels ("R" and "F") are provided for JANTXV product assurance level. |
JAN2N6274-TransistorNPN Silicon Power 150V, 50A | Bipolar (BJT) | 1 | Active | This specification covers the performance requirements for NPN silicon, power, 2N6274 and 2N6277 transistors. Three levels of product assurance (JAN, JANTX and JANTXV) are provided for each encapsulated device as specified in MIL-PRF-19500/514. |
JAN2N6286-DarlingtonDarlington PNP Silicon Power -80V to -100V, -20A | Discrete Semiconductor Products | 1 | Active | This specification covers the performance requirements for PNP, Darlington, power, 2N6286 and 2N6287 transistors for use in particular power-switching applications. Three levels of product assurance (JAN, JANTX and JANTXV) are provided for each encapsulated device type as specified in MIL-PRF-19500/505. |
JAN2N6301-DarlingtonDarlington NPN Silicon Power 60V to 80V, 8A | Transistors | 1 | Active | This specification covers the performance requirements for NPN silicon power Darlington, 2N6300 and 2N6301 transistors. Three levels of product assurance (JAN, JANTX and JANTXV) are provided for each encapsulated device type as specified in MIL-PRF-19500/539. |
JAN2N6306-TransistorNPN Silicon Power 250V to 350V, 8A | Discrete Semiconductor Products | 1 | Active | This specification covers the performance requirements for NPN silicon, power 2N6306 and 2N6308 transistors. Three levels of product assurance (JAN, JANTX and JANTXV) are provided for each device type as specified in MIL-PRF-19500/498. |
JAN2N6308-TransistorNPN Silicon Power 250V to 350V, 8A | Discrete Semiconductor Products | 2 | Active | This specification covers the performance requirements for NPN silicon, power 2N6306 and 2N6308 transistors. Three levels of product assurance (JAN, JANTX and JANTXV) are provided for each device type as specified in MIL-PRF-19500/498. |
JAN2N6341-TransistorNPN Silicon Power 100V to 150V, 25A | Single Bipolar Transistors | 1 | Active | This specification covers the performance requirements for NPN silicon power, 2N6338 and 2N6341 transistors. Four levels of product assurance (JAN, JANTX, JANTXV and JANS) are provided for each encapsulated device as specified in MIL-PRF-19500/509. |
JAN2N657S-TransistorNPN Silicon Medium-Power 60V to 100V, 0.2A | Single Bipolar Transistors | 3 | Active | This specification covers the performance requirements for NPN, silicon, medium power, 2N497, 2N498, 2N656 and 2N657 transistors. One level of product assurance (JAN) is provided for encapsulated devices as specified in MIL-PRF-19500/74.The device package outlines are as follows: TO–205AA (formerly modified TO–5) (without suffix S) or a TO–205AD (formerly modified TO–39) (with suffix S) in accordance with all encapsulated device types. |
JAN2N697S-TransistorNPN Silicon Switching Medium-Power 40V, 0.15A | Discrete Semiconductor Products | 1 | Active | This specification covers the performance requirements for NPN, silicon, switching, medium power, 2N696 and 2N697 transistors. One level of product assurance (JAN) is provided for all encapsulated devices as specified in MIL-PRF-19500/99. The device package outlines are as follows: TO-205AA (formerly modified TO-5 without suffix S) or a TO-205AD (formerly modified TO-39 with suffix S) for all encapsulated device types. |
JAN2N7370-DarlingtonDarlington NPN Silicon Power 100V, 12A | Discrete Semiconductor Products | 1 | Active | This specification covers the performance requirements for NPN silicon, high power Darlington, 2N7370 transistors. Four levels of product assurance (JAN, JANTX, JANTXV and JANS) are provided for each device type as specified in MIL-PRF-19500/624. |