JAN2N6306-Transistor Series

NPN Silicon Power 250V to 350V, 8A

Catalog

NPN Silicon Power 250V to 350V, 8A

Part	Current - Collector Cutoff (Max) [Max]	Vce Saturation (Max) @ Ib, Ic	Qualification	Supplier Device Package	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Package / Case	Transistor Type	Grade	Mounting Type	Voltage - Collector Emitter Breakdown (Max)	Current - Collector (Ic) (Max) [Max]
Microchip Technology JAN2N6306	50 µA	5 V	MIL-PRF-19500/498	TO-204AA (TO-3)	15 hFE	TO-204AA TO-3	NPN	Military	Through Hole	250 V	8 A

Catalog

NPN Silicon Power 250V to 350V, 8A

Key Features

- The device packages for the encapsulated device types are as follows: Case mount TO-204AA (formerly TO-3), case mount TO-254AA (T1) and case mount TO-257AA (T3).

Description

This specification covers the performance requirements for NPN silicon, power 2N6306 and 2N6308 transistors. Three levels of product assurance (JAN, JANTX and JANTXV) are provided for each device type as specified in MIL-PRF-19500/498.