JAN2N7370-Darlington Series

Darlington NPN Silicon Power 100V, 12A

Catalog

Darlington NPN Silicon Power 100V, 12A

Part	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Current - Collector (Ic) (Max) [Max]	Voltage - Collector Emitter Breakdown (Max) [Max]	Mounting Type	Power - Max [Max]	Package / Case	Supplier Device Package	Current - Collector Cutoff (Max) [Max]	Vce Saturation (Max) @ Ib, Ic	Qualification	Grade
Microchip Technology JAN2N7370	1000	12 A	100 V	Through Hole	100 W	TO-254-3 TO-254AA	TO-254AA	1 mA	3 V	MIL-PRF-19500/624	Military

Catalog

Darlington NPN Silicon Power 100V, 12A

Key Features

- The device package style is a three terminal flange mount header configuration modified TO-254AA (T1).

Description

This specification covers the performance requirements for NPN silicon, high power Darlington, 2N7370 transistors. Four levels of product assurance (JAN, JANTX, JANTXV and JANS) are provided for each device type as specified in MIL-PRF-19500/624.