JAN2N6308-Transistor Series

NPN Silicon Power 250V to 350V, 8A

Catalog

NPN Silicon Power 250V to 350V, 8A

Part	Qualification	Package / Case	Transistor Type	DC Current Gain (hFE) (Min) @ Ic, Vce	Current - Collector (Ic) (Max) [Max]	Supplier Device Package	Voltage - Collector Emitter Breakdown (Max) [Max]	Mounting Type	Current - Collector Cutoff (Max) [Max]	Grade	Vce Saturation (Max) @ Ib, Ic
Microchip Technology JAN2N6308	MIL-PRF-19500/498	TO-204AA TO-3	NPN	12 hFE	8 A	TO-204AA (TO-3)	350 V	Through Hole	50 µA	Military	5 V
Microchip Technology JANTX2N6308	MIL-PRF-19500/498	TO-204AA TO-3	NPN	12 hFE	8 A	TO-204AA (TO-3)	350 V	Through Hole	50 µA	Military	5 V

Catalog

NPN Silicon Power 250V to 350V, 8A

Key Features

- The device packages for the encapsulated device types are as follows: Case mount TO-204AA (formerly TO-3), case mount TO-254AA (T1) and case mount TO-257AA (T3).

Description

This specification covers the performance requirements for NPN silicon, power 2N6306 and 2N6308 transistors. Three levels of product assurance (JAN, JANTX and JANTXV) are provided for each device type as specified in MIL-PRF-19500/498.