Microchip Technology

This specification covers the performance requirements for NPN, silicon, low-power 2N3019, 2N3057A and 2N3700 transistors. Four levels of product assurance (JAN, JANTX, JANTXV and JANS) are provided for each device type as specified in MIL-PRF-19500/391. Two levels of product assurance (JANHC and JANKC) are provided for each unencapsulated device type. Provisions for radiation hardness assurance (RHA) to eleven radiation levels are provided for quality levels JANTXV, JANS, JANHC, and JANKC. RHA level designators "E", "K", "U", "M", "D", "P", "L", "R", "F", "G", and "H" are appended to the device prefix to identify devices, which have passed RHA requirements. The device packages for the encapsulated device types are as follows: TO-205AA and TO-205AD (formerly TO-5 and TO-39), TO-206AB (formerlyTO-46), three terminal round metal can TO-206AA (formerly TO-18), and four terminal SMD package UB and UBC.

This specification covers the performance requirements for NPN, silicon, power, 2N5002 and 2N5004 transistors for use in high-speed power-switching applications. Four levels of product assurance (JAN, JANTX, JANTXV and JANS) are provided for each encapsulated device type as specified in MIL-PRF-19500/534. Two levels of product assurance (JANHC and JANKC) for each unencapsulated device type die.

This specification covers the performance requirements for PNP, silicon, switching, 2N5415 and 2N5416 transistors, complimentary to 2N3439 and 2N3440 transistors. Four levels of product assurance (JAN, JANTX, JANTXV and JANS) are provided for each device type as specified in MIL-PRF-19500/485. Two levels of product assurance (JANHC and JANKC) are provided for each unencapsulated device type. Provisions for radiation hardness assurance (RHA) to eight radiation levels is provided for JANTXV, JANS, JANHC, and JANKC product assurance levels. RHA level designators "M", "D", "P", "L", "R", "F", "G", and "H" are appended to the device prefix to identify devices, which have passed RHA requirements.

This specification covers the performance requirements for NPN, silicon, radiation hardened, low power amplifier and switching 2N3498, 2N3499, 2N3500 and 2N3501 transistors. Four levels of product assurance are provided for each encapsulated device (JAN, JANTX, JANTXV and JANS) as specified in MIL-PRF-19500/366. Two levels of product assurance are provided for unencapsulated die (JANHC and JANKC). RHA level designators "E", "K", "U", "M", "D", "P", "L", "R" and, "F " are appended to the device prefix to identify devices, which have passed RHA requirements. The device package for the encapsulated device type are as follows: TO-5, TO-39 and surface mount versions (UB only and U4 suffix versions). The dimensions and topography for JANHC and JANKC unencapsulated die are as outlined in MIL-PRF-19500/366.

This specification covers the performance requirements for NPN, silicon, radiation hardened, low power amplifier and switching 2N3498, 2N3499, 2N3500 and 2N3501 transistors. Four levels of product assurance are provided for each encapsulated device (JAN, JANTX, JANTXV and JANS) as specified in MIL-PRF-19500/366. Two levels of product assurance are provided for unencapsulated die (JANHC and JANKC). RHA level designators "E", "K", "U", "M", "D", "P", "L", "R" and, "F " are appended to the device prefix to identify devices, which have passed RHA requirements. The device package for the encapsulated device type are as follows: TO-5, TO-39 and surface mount versions (UB only and U4 suffix versions). The dimensions and topography for JANHC and JANKC unencapsulated die are as outlined in MIL-PRF-19500/366.

This specification covers the performance requirements for NPN, silicon, radiation hardened, low power amplifier and switching 2N3498, 2N3499, 2N3500 and 2N3501 transistors. Four levels of product assurance are provided for each encapsulated device (JAN, JANTX, JANTXV and JANS) as specified in MIL-PRF-19500/366. Two levels of product assurance are provided for unencapsulated die (JANHC and JANKC). RHA level designators "E", "K", "U", "M", "D", "P", "L", "R" and, "F " are appended to the device prefix to identify devices, which have passed RHA requirements. The device package for the encapsulated device type are as follows: TO-5, TO-39 and surface mount versions (UB only and U4 suffix versions). The dimensions and topography for JANHC and JANKC unencapsulated die are as outlined in MIL-PRF-19500/366.

This specification covers the performance requirements for NPN silicon switching, 2N5339 transistors. Four levels of product assurance (JAN, JANTX, JANTXV and JANS) are provided for each encapsulated device type as specified in MIL-PRF-19500/560 and two levels of product assurance (JANHC and JANKC) are provided for each unencapsulated device type as specified in MIL-PRF-19500/560. Provisions for radiation hardness assurance (RHA) to eight radiation levels is provided for JANS and JANKC product assurance levels. RHA level designators "M", "D", "P", "L", "R", "F", "G", and "H" are appended to the device prefix to identify devices, which have passed RHA requirements.

This specification covers the performance requirements for PNP silicon switching, 2N6193 transistors. Four levels of product assurance (JAN, JANTX, JANTXV and JANS) are provided for each encapsulated device type as specified in MIL-PRF-19500/561. Two levels of product assurance (JANHC and JANKC) are provided for each unencapsulated device type as specified in MIL-PRF-19500/561. Radiation hardness assurance (RHA) level designators "M", "D", "P", "L", "R", "F", "G", and "H" are appended to the device prefix to identify devices which have passed RHA requirements. Provisions for (RHA) to two radiation levels ("R" and "F") are provided for JANTXV product assurance level.

Microchip’s new M6 technology has been developed to provide extreme reliability and enhanced radiation hardness for hermetic Power MOSFETs targeted for space and military applications. Microchip Rad-Hard MOSFETs feature low RDS(on) and low total gate charge. The devices have been developed for Total Dose and Single-Event environments. The M6 will perform in extreme-environment applications and will remain within specification in radiation environments up to 300 Krad total ionizing dose (TID). The JANSR2N7593U3 device is designed for the following applications: • DC–DC converters • Motor control • Switch mode power supplies