JAN2N6286-Darlington Series

Darlington PNP Silicon Power -80V to -100V, -20A

Catalog

Darlington PNP Silicon Power -80V to -100V, -20A

Part	Vce Saturation (Max) @ Ib, Ic	Package / Case	Grade	Voltage - Collector Emitter Breakdown (Max) [Max]	Current - Collector (Ic) (Max)	Supplier Device Package	Power - Max [Max]	Mounting Type	Transistor Type	Qualification	DC Current Gain (hFE) (Min) @ Ic, Vce	Current - Collector Cutoff (Max) [Max]
Microchip Technology JAN2N6286	3 V	TO-204AA TO-3	Military	80 V	20 A	TO-204AA (TO-3)	175 W	Through Hole	PNP - Darlington	MIL-PRF-19500/505	1500 hFE	1 mA

Catalog

Darlington PNP Silicon Power -80V to -100V, -20A

Key Features

- The device package outlines are as follows: similar to TO-3 for all encapsulated device types.

Description

This specification covers the performance requirements for PNP, Darlington, power, 2N6286 and 2N6287 transistors for use in particular power-switching applications. Three levels of product assurance (JAN, JANTX and JANTXV) are provided for each encapsulated device type as specified in MIL-PRF-19500/505.