JAN2N6301-Darlington Series

Darlington NPN Silicon Power 60V to 80V, 8A

Catalog

Darlington NPN Silicon Power 60V to 80V, 8A

Part	Package / Case	Current - Collector (Ic) (Max) [Max]	Current - Collector Cutoff (Max) [Max]	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Operating Temperature [Min]	Operating Temperature [Max]	Power - Max [Max]	Qualification	Vce Saturation (Max) @ Ib, Ic	Supplier Device Package	Voltage - Collector Emitter Breakdown (Max) [Max]	Grade	Mounting Type
Microchip Technology JAN2N6301	TO-213AA TO-66-2	8 A	500 çA	750	-55 °C	200 C	75 W	MIL-PRF-19500/539	3 V	TO-66 (TO-213AA)	80 V	Military	Through Hole

Catalog

Darlington NPN Silicon Power 60V to 80V, 8A

Key Features

- The device package outlines are as follows: TO-213AA (formerly TO-66) for all encapsulated device types.

Description

This specification covers the performance requirements for NPN silicon power Darlington, 2N6300 and 2N6301 transistors. Three levels of product assurance (JAN, JANTX and JANTXV) are provided for each encapsulated device type as specified in MIL-PRF-19500/539.