LSCR1031000V General Purpose Fuse Stud 1200A | Fuseholders | 1 | Active | Littelfuse LSCR Series is a comprehensive line of modular fuse blocks, designed to accommodate a wide range of High-Speed and UL Power Fuses. These LSCR Series blocks have modular stud type design that enables easy mounting in panel boards. LSCR Series blocks are CE Certified and RoHS Compliant. |
| Discrete Semiconductor Products | 2 | Active | Littelfuse Silicon Carbide (SiC) MOSFET LSIC1MO120E0120 1200 V come in ratings of 1200 V, 120 mOhm in a TO-247-3L package. |
| Single FETs, MOSFETs | 1 | Active | Littelfuse 1700V, 750mOhm Silicon Carbide (SiC) MOSFET bring SiC fast switching and energy saving performance to the 1700V voltage range, focusing on auxiliary power supplies. The MOSFET is available in 3 different discrete packages, with the recent addition of a TO-268-2L option with extra clearance between source and gate pin. The separated source pin of the TO-268-7L option reduce significantly the parasitic source inductance path to the driver, which helps improve the efficiency in high power applications. The maximum operating junction temperature is 175 ºC. |
| Discrete Semiconductor Products | 1 | Obsolete | This series of silicon carbide (SiC) Schottky diodes has negligible reverse recovery current, high surge capability, and a maximum operating junction temperature of 175 °C. These diodes series are ideal for applications where improvements in efficiency, reliability, and thermal management are desired. |
| Single Diodes | 1 | Active | This series of silicon carbide (SiC) Schottky diodes has negligible reverse recovery current, high surge capability, and a maximum operating junction temperature of 175 °C. These diodes series are ideal for applications where improvements in efficiency, reliability, and thermal management are desired. |
| Rectifiers | 1 | Active | This series of silicon carbide (SiC) Schottky diodes has negligible reverse recovery current, high surge capability, and a maximum operating junction temperature of 175 °C. These diodes series are ideal for applications where improvements in efficiency, reliability, and thermal management are desired. |
| Single Diodes | 2 | Obsolete | |
| Diodes | 1 | Active | The LSIC2SD170Bxx 1700V SiC Schottky Barrier Diode in TO-247-2L are available in 10A, 25A and 50A current ratings. SiC Schottky Diodes have negligible reverse recovery, which reduces switching losses and system efficiency. This series of silicon carbide (SiC) Schottky diodes has high surge capability, positive temperature coefficient for ease of paralleling and a maximum operating junction temperature of 175°C. These series is an ideal candidate for applications where improvements in efficiency, improved reliability for paralleling, and thermal management are needed. |
| Discrete Semiconductor Products | 1 | Active | |
| Rectifiers | 1 | Active | |
