LSIC2SD065D20A Series

650V/20A SiC SBD?TO263-2LAEC-Q101

Catalog

650V/20A SiC SBD?TO263-2LAEC-Q101

Part	Supplier Device Package	Mounting Type	Package / Case	Speed	Voltage - Forward (Vf) (Max) @ If	Capacitance @ Vr, F	Technology	Voltage - DC Reverse (Vr) (Max) [Max]	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Current - Reverse Leakage @ Vr	Grade	Qualification	Reverse Recovery Time (trr)
LITTELFUSE LSIC2SD065D20A	TO-220AC TO-263-2L	Surface Mount Through Hole	D2PAK (2 Leads + Tab) TO-220-2 TO-263-3 TO-263AB	500 mA	1.8 V	960 pF	SiC (Silicon Carbide) Schottky	650 V	175 ░C	-55 °C	100 µA	Automotive	AEC-Q101	0 ns

Catalog

650V/20A SiC SBD?TO263-2LAEC-Q101

Description

This series of silicon carbide (SiC) Schottky diodes has negligible reverse recovery current, high surge capability, and a maximum operating junction temperature of 175 °C. These diodes series are ideal for applications where improvements in efficiency, reliability, and thermal management are desired.