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LSIC2SD065E40CCA Series

650V/40A SiC SBD TO247-3LAEC-Q101

Catalog

650V/40A SiC SBD TO247-3LAEC-Q101

Key Features

• Positive temperature coefficient for safe operation and ease of paralleling
• 175 °C maximum operating junction temperature
• Excellent surge capability
• Extremely fast, temperature-independent switching behavior
• Dramatically reduced switching losses compared to Si bipolar diodes

Description

AI
This series of silicon carbide (SiC) Schottky diodes has negligible reverse recovery current, high surge capability, and a maximum operating junction temperature of 175 °C. These diodes series are ideal for applications where improvements in efficiency, reliability, and thermal management are desired.