LSIC1MO170E0750 Series

SiC MOSFET 1700V 750mO TO-247-3L

Manufacturer: Littelfuse/Commercial Vehicle Products

Catalog

SiC MOSFET 1700V 750mO TO-247-3L

Part	Package / Case	Gate Charge (Qg) (Max) @ Vgs [Max]	Mounting Type	FET Type	Vgs (Max) [Min]	Vgs (Max) [Max]	Operating Temperature [Min]	Operating Temperature [Max]	Rds On (Max) @ Id, Vgs [Max]	Supplier Device Package	Input Capacitance (Ciss) (Max) @ Vds [Max]	Current - Continuous Drain (Id) @ 25°C	Drain to Source Voltage (Vdss)	Power Dissipation (Max)
Littelfuse/Commercial Vehicle Products LSIC1MO170E0750	TO-247-3	13 nC	Through Hole	N-Channel	-6 V	22 V	-55 °C	175 ░C	1 Ohm	TO-247AD	200 pF	6.2 A	1700 V	60 W

Catalog

SiC MOSFET 1700V 750mO TO-247-3L

Key Features

• On-state resistance RDS(ON) 750mΩ (typ)

• Gate resistance 29Ω typ.

• Continuous drain current ~4.4A at 100°C

• Reverse diode current 9A cont. at 25°C

• Operating temperature junction up to 175°C

Description

Littelfuse 1700V, 750mOhm Silicon Carbide (SiC) MOSFET bring SiC fast switching and energy saving performance to the 1700V voltage range, focusing on auxiliary power supplies. The MOSFET is available in 3 different discrete packages, with the recent addition of a TO-268-2L option with extra clearance between source and gate pin. The separated source pin of the TO-268-7L option reduce significantly the parasitic source inductance path to the driver, which helps improve the efficiency in high power applications. The maximum operating junction temperature is 175 ºC.