LSIC2SD170B10 Series

SiC Schottky Diode 1700V 10A TO-247-2L

Manufacturer: Littelfuse/Commercial Vehicle Products

Catalog

SiC Schottky Diode 1700V 10A TO-247-2L

Part	Capacitance @ Vr, F	Mounting Type	Technology	Speed	Reverse Recovery Time (trr)	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Current - Average Rectified (Io)	Supplier Device Package	Voltage - DC Reverse (Vr) (Max) [Max]	Package / Case	Voltage - Forward (Vf) (Max) @ If
Littelfuse/Commercial Vehicle Products LSIC2SD170B10	757 pF	Through Hole	SiC (Silicon Carbide) Schottky	No Recovery Time	0 ns	175 ░C	-55 C	31 A	TO-247-2	1700 V	TO-247-2	1.8 V

Catalog

SiC Schottky Diode 1700V 10A TO-247-2L

Key Features

• Positive temperature coefficient

• 175°C maximum operating junction temperature

• Extremely fast, temperature-independent switching behavior

• Nearly zero reverse recovery current

• High surge capability

• Low RthJC

Description

The LSIC2SD170Bxx 1700V SiC Schottky Barrier Diode in TO-247-2L are available in 10A, 25A and 50A current ratings. SiC Schottky Diodes have negligible reverse recovery, which reduces switching losses and system efficiency. This series of silicon carbide (SiC) Schottky diodes has high surge capability, positive temperature coefficient for ease of paralleling and a maximum operating junction temperature of 175°C. These series is an ideal candidate for applications where improvements in efficiency, improved reliability for paralleling, and thermal management are needed.