LITTELFUSE

Benchmark setting breakdown voltage performance, protectingsub 20 nm I/O’s. Finer geometry chip designs run the risk ofdamage at voltage levels higher than 3.3V. The SP33R6-04UTG providesheadroom to support all of the low voltage differential signaling(0.3V) while protecting the data lines from damaging over voltage,starting at 0.6V.

The SP3400-02UTG integrates 2 channels of low capacitance steering diodes and an additional zener diode to provide protection for electronic equipment that may experience destructive electrostatic discharges (ESD). The SP3400 can safely absorb repetitive ESD strikes above the maximum contact level specified in IEC 61000-4-2 international standard (±8kV contact discharge) without performance degradation. The low off-state capacitance makes it ideal for protecting high-speed signal lines such as USB2.0 and 1Gb Ethernet with an extremely low dynamic resistance to protect the most sensitive, state of the art chipsets against ESD transients.

SP3401-02UTG is specifically designed to protect high-speed interfaces against ElectroStatic Discharge (ESD), such as DisplayPort interfaces and USB 3.1 Gen 1. The signal line is protected by a TVS diode offering low line capacitance of 0.35 pF typical. SP3401 can safely absorb repetitive ESD strikes up to ±18 kV contact exceeding IEC 61000-4-2, level 4 ( ±8kV contact discharge). Excellent low capacitance, clamping capability, low leakage, and fast response time make this parts an ideal solution for protecting high speed data lines.

The SP3420-04UTG includes four channel ultra low capacitance and high-level ESD protection diodes to protect high-speed data rate such as USB 3.1, DisplayPort, Thunderbolt, and e-SATA. The typical capacitance of 0.32pF helps ensure signal integrity and this robust device can safely absorb repetitive ESD strikes at the maximum level specified in the IEC 61000-4-2 international standard (Level 4, ±8kV contact discharge) without performance degradation safely dissipate 6A of 8/20μs surge current (IEC 61000-4-5 2nd edition).

The SP3422-04UTG integrates 4 channels of ultralow capacitance rail-to-rail diodes and an additional zener diode to provide protection for electronic equipment that may experience destructive electrostatic discharges (ESD). This robust component can safely absorb repetitive ESD strikes above the maximum level specified in the IEC 61000-4-2 international standard (±8kV contact discharge) without performance degradation. The extremely low loading capacitance also makes it ideal for protecting high speed signal pins such as V-by-One®, USB3.0, USB2.0, and IEEE 1394.

The SP3423 integrates 2 channels of low capacitance steering diodes and an additional zener diode to provide protection for electronic equipment that may experience destructive electrostatic discharges (ESD). The SP3423 can safely absorb repetitive ESD strikes above the maximum contact level specified in IEC 61000-4-2 international standard (±8kV contact discharge) without performance degradation. The low off-state capacitance makes it ideal for protecting high-speed signal lines such as USB2.0 and 1Gb Ethernet with an extremely low dynamic resistance to protect the most sensitive, state of the art chipsets against ESD transients.

The SP3522 integrates ultra low capacitance cathode-to cathode silicon avalanche diodes to provide protection for electronic equipment that may experience destructive electrostatic discharges (ESD). This robust component can safely absorb repetitive ESD strikes above the maximum level specified in the IEC 61000-4-2 international standard (±8kV contact discharge) without performance degradation. The extremely low loading capacitance also makes it ideal for protecting high speed signal pins such as V-By-One®, HDMI, USB3.0, USB2.0, and IEEE 1394.

The SP3522 integrates ultra low capacitance cathode-to cathode silicon avalanche diodes to provide protection for electronic equipment that may experience destructive electrostatic discharges (ESD). This robust component can safely absorb repetitive ESD strikes above the maximum level specified in the IEC 61000-4-2 international standard (±8kV contact discharge) without performance degradation. The extremely low loading capacitance also makes it ideal for protecting high speed signal pins such as V-By-One®, HDMI, USB3.0, USB2.0, and IEEE 1394.

This SP3530-01ETG unidirectional diode is fabricated in a proprietary silicon avalanche technology. This provides a high level of protection for electronic equipment that may be exposed to electrostatic discharges (ESD). This robust component can safely absorb repetitive ESD strikes above the maximum level specified in the IEC 61000-4-2 international standard (±8kV contact discharge) without performance degradation. The extremely low loadingcapacitance also makes it ideal for protecting high speed signal pins such as V-By-One®, HDMI, USB3.0, USB2.0, and IEEE 1394.

This SP3530-01UTG unidirectional diode is fabricated in a proprietary silicon avalanche technology. This provides a high level of protection for electronic equipment that may be exposed to electrostatic discharges (ESD). This robust component can safely absorb repetitive ESD strikes above the maximum level specified in the IEC 61000-4-2 international standard (±8kV contact discharge) without performance degradation. The extremely low loading capacitance also makes it ideal for protecting high speed signal pins such as V-By-One®, HDMI, USB3.0, USB2.0, and IEEE 1394.