Specification	APT24M120L

Current - Continuous Drain (Id) @ 25°C	24 A
Drain to Source Voltage (Vdss)	1200 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	260 nC
Input Capacitance (Ciss) (Max) @ Vds	8370 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-264AA, TO-264-3
Power Dissipation (Max)	1040 W
Rds On (Max) @ Id, Vgs [Max]	680 mOhm
Supplier Device Package	TO-264 [L]
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	5 V

MOSFET-1200V Series

1200V FREDFET

Part	FET Type	Current - Continuous Drain (Id) @ 25°C	Vgs (Max)	Operating Temperature [Min]	Operating Temperature [Max]	Package / Case	Rds On (Max) @ Id, Vgs	Supplier Device Package	Input Capacitance (Ciss) (Max) @ Vds	Gate Charge (Qg) (Max) @ Vgs	Power Dissipation (Max)	Drive Voltage (Max Rds On, Min Rds On)	Mounting Type	Technology	Drain to Source Voltage (Vdss)	Gate Charge (Qg) (Max) @ Vgs [Max]	Vgs(th) (Max) @ Id	Input Capacitance (Ciss) (Max) @ Vds [Max]	Power Dissipation (Max) [Max]	Rds On (Max) @ Id, Vgs [Max]
Microchip Technology APT4M120K	N-Channel	5 A	30 V	-55 °C	150 °C	TO-220-3	4 Ohm	TO-220 [K]	1385 pF	43 nC	225 W	10 V	Through Hole	MOSFET (Metal Oxide)	1200 V
Microchip Technology APT1201R6BVFRG	N-Channel	8 A				TO-247-3	1.6 Ohm	TO-247 [B]	3660 pF				Through Hole	MOSFET (Metal Oxide)	1200 V	230 nC
Microchip Technology APT12060LVRG	N-Channel	20 A	30 V	-55 °C	150 °C	TO-264-3 TO-264AA	600 mOhm	TO-264 (L)		650 nC	625 W	10 V	Through Hole	MOSFET (Metal Oxide)	1200 V		4 V	9500 pF
Microchip Technology APT7M120S	N-Channel	8 A	30 V	-55 °C	150 °C	D3PAK (2 Leads + Tab) TO-268-3 TO-268AA	2.1 Ohm	D3PAK	2565 pF	80 nC	335 W	10 V	Surface Mount	MOSFET (Metal Oxide)	1200 V
Microchip Technology APT1201R2BFLLG	N-Channel	12 A				TO-247-3	1.25 Ohm	TO-247 [B]					Through Hole	MOSFET (Metal Oxide)	1200 V	100 nC		2540 pF
Microchip Technology APT12080LVRG	N-Channel	16 A	30 V	-55 °C	150 °C	TO-264-3 TO-264AA	800 mOhm	TO-264 (L)	7800 pF	485 nC		10 V	Through Hole	MOSFET (Metal Oxide)	1200 V		4 V		520 W
Microchip Technology APT28M120L	N-Channel	29 A	30 V	-55 °C	150 °C	TO-264-3 TO-264AA		TO-264 [L]	9670 pF		1135 W	10 V	Through Hole	MOSFET (Metal Oxide)	1200 V	300 nC	5 V			530 mOhm
Microchip Technology APT34M120J	N-Channel	35 A	30 V	-55 °C	150 °C	SOT-227-4 miniBLOC	300 mOhm	SOT-227	18200 pF	560 nC	960 W	10 V	Chassis Mount	MOSFET (Metal Oxide)	1200 V		5 V
Microchip Technology APT14M120S	N-Channel	14 A	30 V	-55 °C	150 °C	D3PAK (2 Leads + Tab) TO-268-3 TO-268AA	1.1 Ohm	D3PAK	4765 pF		625 W	10 V	Surface Mount	MOSFET (Metal Oxide)	1200 V	145 nC
Microchip Technology APT24M120L	N-Channel	24 A	30 V	-55 °C	150 °C	TO-264-3 TO-264AA		TO-264 [L]	8370 pF	260 nC	1040 W	10 V	Through Hole	MOSFET (Metal Oxide)	1200 V		5 V			680 mOhm

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Tube	30	$ 19.02
Microchip Direct	TUBE	1	$ 19.02
		100	$ 16.43
		250	$ 15.82
		500	$ 15.43
		1000	$ 15.07
		5000	$ 14.58

Description

General part information

MOSFET-1200V Series

Power MOS 8™ is a family of high speed, high voltage (500-1200 V) N-channel

switch-mode power transistors with lower EMI characteristics and lower cost

compared to previous generation devices. These MOSFETs / FREDFETs have been

Documents

Technical documentation and resources

Datasheet

APT24M120L

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APT24M120L

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Technical Specifications

MOSFET-1200V Series

Pricing

Description

MOSFET-1200V Series

Documents

Datasheet

APT14M120BG, APT14M120SG MOSFET MOS8 1200 V 14 A TO-247 Datasheet

APT34M120J MOSFET MOS8 1200 V 34 A SOT-227 Datasheet

APT28M120B2, APT28M120L MOSFET MOS8 1200 V 28 A TO-247 MAX Datasheet

APT12057B2LLG, APT12057LLLG MOSFET MOS7 1200 V 57 Ohm TO-247 MAX Datasheet

APT24M120B2, APT24M120L MOSFET MOS8 1200 V 24 A TO-247 MAX Datasheet

APT19M120J MOSFET MOS8 1200 V 19 A SOT-227 Datasheet

MOSFET-1200V Series