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Technical Specifications
Parameters and characteristics for this part
| Specification | APT14M120S |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 14 A |
| Drain to Source Voltage (Vdss) | 1200 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs [Max] | 145 nC |
| Input Capacitance (Ciss) (Max) @ Vds | 4765 pF |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | D3PAK (2 Leads + Tab), TO-268AA, TO-268-3 |
| Power Dissipation (Max) | 625 W |
| Rds On (Max) @ Id, Vgs | 1.1 Ohm |
| Supplier Device Package | D3PAK |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 30 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Tube | 1 | $ 11.05 | |
| 100 | $ 9.56 | |||
| Microchip Direct | TUBE | 1 | $ 11.05 | |
| 100 | $ 9.56 | |||
| 250 | $ 9.19 | |||
| 500 | $ 8.98 | |||
| 1000 | $ 8.76 | |||
| 5000 | $ 8.47 | |||
Description
General part information
MOSFET-1200V Series
Power MOS 8™ is a family of high speed, high voltage (500-1200 V) N-channel
switch-mode power transistors with lower EMI characteristics and lower cost
compared to previous generation devices. These MOSFETs / FREDFETs have been
Documents
Technical documentation and resources