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D3PAK
Discrete Semiconductor Products

APT7M120S

Active
Microchip Technology

MOSFET N-CH 1200V 8A D3PAK

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D3PAK
Discrete Semiconductor Products

APT7M120S

Active
Microchip Technology

MOSFET N-CH 1200V 8A D3PAK

Technical Specifications

Parameters and characteristics for this part

SpecificationAPT7M120S
Current - Continuous Drain (Id) @ 25°C8 A
Drain to Source Voltage (Vdss)1200 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs80 nC
Input Capacitance (Ciss) (Max) @ Vds2565 pF
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / CaseD3PAK (2 Leads + Tab), TO-268AA, TO-268-3
Power Dissipation (Max)335 W
Rds On (Max) @ Id, Vgs2.1 Ohm
Supplier Device PackageD3PAK
TechnologyMOSFET (Metal Oxide)
Vgs (Max)30 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyBulk 80$ 6.77
Microchip DirectTUBE 1$ 6.77
100$ 5.85
250$ 5.63
500$ 5.49
1000$ 5.35
5000$ 5.17

Description

General part information

MOSFET-1200V Series

Power MOS 8™ is a family of high speed, high voltage (500-1200 V) N-channel

switch-mode power transistors with lower EMI characteristics and lower cost

compared to previous generation devices. These MOSFETs / FREDFETs have been