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TO-220-3
Discrete Semiconductor Products

APT4M120K

Obsolete
Microchip Technology

POWER FIELD-EFFECT TRANSISTOR, 5A I(D), 1200V, 3.8OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-220AB

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TO-220-3
Discrete Semiconductor Products

APT4M120K

Obsolete
Microchip Technology

POWER FIELD-EFFECT TRANSISTOR, 5A I(D), 1200V, 3.8OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-220AB

Technical Specifications

Parameters and characteristics for this part

SpecificationAPT4M120K
Current - Continuous Drain (Id) @ 25°C5 A
Drain to Source Voltage (Vdss)1200 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs43 nC
Input Capacitance (Ciss) (Max) @ Vds1385 pF
Mounting TypeThrough Hole
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / CaseTO-220-3
Power Dissipation (Max)225 W
Rds On (Max) @ Id, Vgs4 Ohm
Supplier Device PackageTO-220 [K]
TechnologyMOSFET (Metal Oxide)
Vgs (Max)30 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
Microchip DirectTUBE 1$ 3.30
100$ 2.83
250$ 2.75
500$ 2.68
1000$ 2.60
5000$ 2.53

Description

General part information

MOSFET-1200V Series

Power MOS 8™ is a family of high speed, high voltage (500-1200 V) N-channel

switch-mode power transistors with lower EMI characteristics and lower cost

compared to previous generation devices. These MOSFETs / FREDFETs have been