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TO-264 PKG
Discrete Semiconductor Products

APT12060LVRG

Active
Microchip Technology

POWER FIELD-EFFECT TRANSISTOR, 20A I(D), 1200V, 0.6OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-264AA

TO-264 PKG
Discrete Semiconductor Products

APT12060LVRG

Active
Microchip Technology

POWER FIELD-EFFECT TRANSISTOR, 20A I(D), 1200V, 0.6OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-264AA

Technical Specifications

Parameters and characteristics for this part

SpecificationAPT12060LVRG
Current - Continuous Drain (Id) @ 25°C20 A
Drain to Source Voltage (Vdss)1200 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs650 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]9500 pF
Mounting TypeThrough Hole
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / CaseTO-264AA, TO-264-3
Power Dissipation (Max)625 W
Rds On (Max) @ Id, Vgs600 mOhm
Supplier Device PackageTO-264 (L)
TechnologyMOSFET (Metal Oxide)
Vgs (Max)30 V
Vgs(th) (Max) @ Id4 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyTube 1$ 20.38
100$ 17.60
Microchip DirectTUBE 1$ 20.38
100$ 17.60
250$ 16.93
500$ 16.54
1000$ 16.13
5000$ 15.62

Description

General part information

MOSFET-1200V Series

Power MOS 8™ is a family of high speed, high voltage (500-1200 V) N-channel

switch-mode power transistors with lower EMI characteristics and lower cost

compared to previous generation devices. These MOSFETs / FREDFETs have been