Discrete Semiconductor Products

APT1201R6BVFRG

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POWER FIELD-EFFECT TRANSISTOR, 8A I(D), 1200V, 1.6OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-247AD

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DocumentsDatasheet APT1201R4BFLLG, APT1201R4SFLLG FREDFET MOS7 1200 V 1.4 Ohm TO-247 Datasheet +6

Discrete Semiconductor Products

APT1201R6BVFRG

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Microchip Technology

POWER FIELD-EFFECT TRANSISTOR, 8A I(D), 1200V, 1.6OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-247AD

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DocumentsDatasheet APT1201R4BFLLG, APT1201R4SFLLG FREDFET MOS7 1200 V 1.4 Ohm TO-247 Datasheet +6

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Technical Specifications

Parameters and characteristics for this part

Specification	APT1201R6BVFRG

Current - Continuous Drain (Id) @ 25°C	8 A
Drain to Source Voltage (Vdss)	1200 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	230 nC
Input Capacitance (Ciss) (Max) @ Vds	3660 pF
Mounting Type	Through Hole
Package / Case	TO-247-3
Rds On (Max) @ Id, Vgs	1.6 Ohm
Supplier Device Package	TO-247 [B]
Technology	MOSFET (Metal Oxide)

FREDFET-1200V Series

1200V FREDFET

Part	Input Capacitance (Ciss) (Max) @ Vds	Rds On (Max) @ Id, Vgs	Vgs (Max)	Drain to Source Voltage (Vdss)	Package / Case	Operating Temperature [Min]	Operating Temperature [Max]	Current - Continuous Drain (Id) @ 25°C	Vgs(th) (Max) @ Id	Drive Voltage (Max Rds On, Min Rds On)	Supplier Device Package	Mounting Type	Power Dissipation (Max)	Gate Charge (Qg) (Max) @ Vgs	Technology	FET Type	Gate Charge (Qg) (Max) @ Vgs [Max]	Input Capacitance (Ciss) (Max) @ Vds [Max]	Power Dissipation (Max) [Max]
Microchip Technology APT4F120K	1385 pF	4.6 Ohm	30 V	1200 V	TO-220-3	-55 °C	150 °C	4 A	5 V	10 V	TO-220	Through Hole	225 W	43 nC	MOSFET (Metal Oxide)	N-Channel
Microchip Technology APT1201R6BVFRG	3660 pF	1.6 Ohm		1200 V	TO-247-3			8 A			TO-247 [B]	Through Hole			MOSFET (Metal Oxide)	N-Channel	230 nC
Microchip Technology APT12080JVFR	7800 pF	800 mOhm		1200 V	SOT-227-4 miniBLOC			15 A	4 V		ISOTOP®	Chassis Mount		485 nC	MOSFET (Metal Oxide)	N-Channel
Microchip Technology APT12067LFLLG	4420 pF	670 mOhm		1200 V	TO-264-3 TO-264AA			18 A	5 V		TO-264 [L]	Through Hole		150 nC	MOSFET (Metal Oxide)	N-Channel
Microchip Technology APT1201R2BFLLG		1.25 Ohm		1200 V	TO-247-3			12 A			TO-247 [B]	Through Hole			MOSFET (Metal Oxide)	N-Channel	100 nC	2540 pF
Microchip Technology APT32F120J	18200 pF	320 mOhm	30 V	1200 V	SOT-227-4 miniBLOC	-55 °C	150 °C	33 A	5 V	10 V	ISOTOP®	Chassis Mount	960 W	560 nC	MOSFET (Metal Oxide)	N-Channel
Microchip Technology APT12080LVRG	7800 pF	800 mOhm	30 V	1200 V	TO-264-3 TO-264AA	-55 °C	150 °C	16 A	4 V	10 V	TO-264 (L)	Through Hole		485 nC	MOSFET (Metal Oxide)	N-Channel			520 W
Microchip Technology APT13F120B	4765 pF	1.4 Ohm	30 V	1200 V	TO-247-3	-55 °C	150 °C	14 A		10 V	TO-247 [B]	Through Hole	625 W		MOSFET (Metal Oxide)	N-Channel	145 nC
Microchip Technology APT7F120S	2565 pF	2.4 Ohm	30 V	1200 V	D3PAK (2 Leads + Tab) TO-268-3 TO-268AA	-55 °C	150 °C	7 A		10 V	D3PAK	Surface Mount	335 W	80 nC	MOSFET (Metal Oxide)	N-Channel
Microchip Technology APT1204R7SFLLG	715 pF	4.7 Ohm		1200 V	D3PAK (2 Leads + Tab) TO-268-3 TO-268AA			3.5 A			D3PAK	Surface Mount		31 nC	MOSFET (Metal Oxide)	N-Channel