| FETs, MOSFETs | 1 | Active | |
STP4NK60ZN-channel 600 V, 1.7 Ohm typ., 4 A SuperMESH Power MOSFET in TO-220 package | Discrete Semiconductor Products | 1 | Active | These devices are N-channel Zener-protected Power MOSFETs developed using STMicroelectronics' SuperMESH™ technology, achieved through optimization of ST's well established strip-based PowerMESH™ layout. In addition to a significant reduction in on-resistance, this device is designed to ensure a high level of dv/dt capability for the most demanding applications. |
STP4NK60ZFPN-channel 600 V, 1.7 Ohm typ., 4 A SuperMESH Power MOSFET in TO-220FP package | Single FETs, MOSFETs | 1 | Active | These devices are N-channel Zener-protected Power MOSFETs developed using STMicroelectronics' SuperMESH™ technology, achieved through optimization of ST's well established strip-based PowerMESH™ layout. In addition to a significant reduction in on-resistance, this device is designed to ensure a high level of dv/dt capability for the most demanding applications. |
STP4NK80ZN-channel 800 V, 2.7 Ohm typ., 3 A SuperMESH Power MOSFET in a TO-220 package | Transistors | 1 | Active | This high-voltage device is a Zener-protected N-channel Power MOSFET developed using the SuperMESH technology by STMicroelectronics, an optimization of the well-established PowerMESH. In addition to a significant reduction in on-resistance, this device is designed to ensure a high level of dv/dt capability for the most demanding applications. |
STP4NK80ZFPN-channel 800 V, 2.7 Ohm typ., 3 A SuperMESH Power MOSFET in a TO-220FP package | Discrete Semiconductor Products | 1 | Active | This high-voltage device is a Zener-protected N-channel Power MOSFET developed using the SuperMESH technology by STMicroelectronics, an optimization of the well-established PowerMESH. In addition to a significant reduction in on-resistance, this device is designed to ensure a high level of dv/dt capability for the most demanding applications. |
STP50N-channel 650 V, 74 mOhm typ., 33 A MDmesh DM6 Power MOSFET in a TO-220 package | Discrete Semiconductor Products | 3 | Active | This high-voltage N-channel Power MOSFET is part of the MDmesh DM6 fast-recovery diode series. Compared with the previous MDmesh fast generation, DM6 combines very low recovery charge (Qrr), recovery time (trr) and excellent improvement in RDS(on)per area with one of the most effective switching behaviors available in the market for the most demanding high-efficiency bridge topologies and ZVS phase-shift converters. |
| Single | 2 | Obsolete | |
| FETs, MOSFETs | 1 | Obsolete | |
STP55N-channel 60 V, 0.015 Ohm, 50 A STripFET(TM) II Power MOSFET in TO-220 package | FETs, MOSFETs | 2 | Active | This Power MOSFET is the latest development of STMicroelectronis unique "Single Feature Size" strip-based process. The resulting transistor shows extremely high packing density for low onresistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. |
STP55NF06FPN-channel 60 V, 0.015 Ohm, 50 A STripFET(TM) II Power MOSFET in TO-220FP package | Transistors | 1 | Active | These Power MOSFETs have been developed using STMicroelectronics’ unique STripFET process, which is specifically designed to minimize input capacitance and gate charge. This renders the devices suitable for use as primary switch in advanced high-efficiency isolated DC-DC converters for telecom and computer applications, and applications with low gate charge driving requirements. |
