| FETs, MOSFETs | 1 | Active | |
| Single | 3 | Obsolete | |
STP5N105K5N-channel 1050 V, 2.9 Ohm typ., 3 A MDmesh K5 Power MOSFETs in TO-220 package | Transistors | 1 | Active | This N-channel Zener-protected Power MOSFET is designed using ST’s revolutionary avalanche-rugged very high voltage MDmesh™ K5 technology, based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance, and ultra-low gate charge for applications which require superior power density and high efficiency. |
STP5N60M2N-channel 600 V, 1.3 Ohm typ., 3.5 A MDmesh M2 Power MOSFET in TO-220 package | Transistors | 1 | Active | These devices are N-channel Power MOSFETs developed using the MDmesh™ M2 technology. Thanks to their strip layout and improved vertical structure, these devices exhibit low on-resistance and optimized switching characteristics, rendering them suitable for the most demanding high-efficiency converters. |
STP5N80K5N-channel 800 V, 1.50 Ohm typ., 4 A MDmesh K5 Power MOSFET in a TO-220 package | Single FETs, MOSFETs | 1 | Active | This very high voltage N-channel Power MOSFET is designed using MDmesh™ K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on resistance and ultra-low gate charge for application requiring superior power density and high efficiency. |
STP5N95K5N-channel 950 V, 2 Ohm typ., 3.5 A MDmesh K5 Power MOSFET in a TO-220 package | Discrete Semiconductor Products | 1 | Active | This very high voltage N-channel Power MOSFET is designed using MDmesh K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency. |
STP5NK100ZN-channel 1000 V, 2.7 Ohm typ., 3.5 A SuperMESH Power MOSFET in a TO-220 package | Single FETs, MOSFETs | 1 | Active | The new SuperMESH series of Power MOSFETS is the result of further design improvements on ST's well-established stripbased PowerMESH layout. In addition to significantly lower on-resistance, the device offers superior dv/dt capability to ensure optimal performance even in the most demanding applications. The SuperMESH devices further complement an already broad range of innovative high voltage MOSFETs, which includes the revolutionary MDmesh products. |
| FETs, MOSFETs | 1 | Active | |
STP5NK50ZFPN-channel 500 V, 1.22 Ohm typ., 4.4 A SuperMESH Power MOSFET in TO-220FP package | Transistors | 1 | NRND | These high-voltage devices are Zener-protected N-channel Power MOSFETs developed using the SuperMESH™ technology by STMicroelectronics, an optimization of the well-established PowerMESH™. In addition to a significant reduction in on-resistance, these devices are designed to ensure a high level of dv/dt capability for the most demanding applications. |
| Single FETs, MOSFETs | 1 | NRND | |
