STP4NK80ZFP Series

N-channel 800 V, 2.7 Ohm typ., 3 A SuperMESH Power MOSFET in a TO-220FP package

Catalog

N-channel 800 V, 2.7 Ohm typ., 3 A SuperMESH Power MOSFET in a TO-220FP package

Part	Gate Charge (Qg) (Max) @ Vgs	Technology	Mounting Type	Vgs(th) (Max) @ Id	Current - Continuous Drain (Id) @ 25°C	Vgs (Max)	Power Dissipation (Max)	Drive Voltage (Max Rds On, Min Rds On)	FET Type	Rds On (Max) @ Id, Vgs	Supplier Device Package	Operating Temperature [Max]	Operating Temperature [Min]	Drain to Source Voltage (Vdss)	Package / Case	Input Capacitance (Ciss) (Max) @ Vds
STMicroelectronics STP4NK80ZFP	22.5 nC	MOSFET (Metal Oxide)	Through Hole	4.5 V	3 A	30 V	25 W	10 V	N-Channel	3.5 Ohm	TO-220FP	150 °C	-55 °C	800 V	TO-220-3 Full Pack	575 pF

Catalog

N-channel 800 V, 2.7 Ohm typ., 3 A SuperMESH Power MOSFET in a TO-220FP package

Description

This high-voltage device is a Zener-protected N-channel Power MOSFET developed using the SuperMESH technology by STMicroelectronics, an optimization of the well-established PowerMESH. In addition to a significant reduction in on-resistance, this device is designed to ensure a high level of dv/dt capability for the most demanding applications.