| Discrete Semiconductor Products | 2 | Obsolete | |
STP40N65M2N-channel 650 V, 0.087 Ohm typ., 32 A MDmesh M2 Power MOSFET in TO-220 package | FETs, MOSFETs | 1 | Active | These devices are N-channel Power MOSFETs developed using MDmesh™ M2 technology. Thanks to their strip layout and improved vertical structure, the devices exhibit low on-resistance and optimized switching characteristics, rendering them suitable for the most demanding high efficiency converters. |
STP40NF03LN-Channel 30V - 0.020 Ohm - 40A - TO-220 StripFET(TM) II MOSFET | Single FETs, MOSFETs | 1 | NRND | This Power MOSFET is the latest development of STMicroelectronics unique "Single Feature Size" strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. |
STP40NF10N-Channel 100V - 0.024Ohm - 50A - TO-220 LOW GATE CHARGE StripFET II MOSFET | FETs, MOSFETs | 1 | Active | This N-channel 100 V Power MOSFET is the latest development of STMicroelectronics unique "single feature size" strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps allowing remarkable manufacturing reproducibility. |
STP40NF20N-channel 200V - 0.038Ohm -40A- D2PAK/TO-220/TO-220FP/TO-247 | FETs, MOSFETs | 1 | Active | This Power MOSFET series realized with STMicroelectronics unique STripFET process has specifically been designed to minimize input capacitance and gate charge. It is therefore suitable as primary switch in advanced high-efficiency isolated DC-DC converters. |
STP42N-channel 600 V, 0.076 Ohm typ., 34 A MDmesh M2 EP Power MOSFET in a TO-220 package | FETs, MOSFETs | 2 | Active | MDmesh V is a revolutionary Power MOSFET technology based on an innovative proprietary vertical process, which is combined with STMicroelectronics well-known PowerMESH horizontal layout structure. The resulting product has extremely low on-resistance, which is unmatched among silicon-based Power MOSFETs, making it especially suitable for applications which require superior power density and outstanding efficiencies. |
STP43N60DM2N-channel 600 V, 0.085 Ohm typ., 34 A MDmesh DM2 Power MOSFET in TO-220 package | Transistors | 1 | Active | This high voltage N-channel Power MOSFET is part of the MDmesh™ DM2 fast recovery diode series. It offers very low recovery charge and time (Qrr, trr) combined with low RDS(on), rendering it suitable for the most demanding high efficiency converters and ideal for bridge topologies and ZVS phase-shift converters. |
STP45Automotive-grade N-channel 600 V, 0.085 Ohm typ., 34 A MDmesh DM2 Power MOSFET in a TO-220 package | Single FETs, MOSFETs | 2 | Active | This Power MOSFET has been developed using STMicroelectronics’ unique STripFET process, which is specifically designed to minimize input capacitance and gate charge. This renders the device suitable for use as primary switch in advanced high-efficiency isolated DC-DC converters for telecom and computer applications, and applications with low gate charge driving requirements. |
STP45N10F7NN-channel 100 V, 14.5 Ohm typ., 45 A, STripFET F7 Power MOSFETs in DPAK, I2PAK and TO-220 packages | Discrete Semiconductor Products | 1 | Active | These N-channel Power MOSFETs utilize STripFET™ F7 technology with an enhanced trench gate structure that results in very low on-state resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching. |
STP45N40DM2AGAutomotive-grade N-channel 400 V, 0.063 Ohm typ., 38 A MDmesh DM2 Power MOSFET in a TO-220 package | Single FETs, MOSFETs | 1 | Active | This high voltage N-channel Power MOSFET is part of the MDmesh™ DM2 fast recovery diode series. It offers very low recovery charge (Qrr) and time (trr) combined with low RDS(on), rendering it suitable for the most demanding high efficiency converters and ideal for bridge topologies and ZVS phase-shift converters. |
