STMicroelectronics

These high-voltage N-channel Power MOSFETs are part of the MDmesh DM6 fast-recovery diode series. Compared with the previous MDmesh fast generation, DM6 combines very low recovery charge (Qrr), recovery time (trr) and excellent improvement in RDS(on)per area with one of the most effective switching behaviors available in the market for the most demanding high-efficiency bridge topologies and ZVS phase-shift converters.

These devices are N-channel MDmesh™ V Power MOSFETs based on an innovative proprietary vertical process technology, which is combined with STMicroelectronics’ well-known PowerMESH™ horizontal layout structure. The resulting product has extremely low on-resistance, which is unmatched among silicon-based Power MOSFETs, making it especially suitable for applications which require superior power density and outstanding efficiency.

These Power MOSFETs have been developed using STMicroelectronics’ unique STripFET process, which is specifically designed to minimize input capacitance and gate charge. This renders the devices suitable for use as primary switch in advanced high-efficiency isolated DC-DC converters for telecom and computer applications, and applications with low gate charge driving requirements.

The STP4CMP is a charge-pump-based 4-channel LED driver designed for RGB illumination or LCD display backlighting. The STP4CMP works off a battery with an input voltage between 2.7 V and 5.5 V. The device generates regulated current sinks with high absolute and channel-to-channel accuracy to drive up to 4 LEDs. It can support LEDs with forward voltage as high as 3.8 V. The current sink for each channel can be set with 4 individual external resistors. Each channel is controlled independently. The PWM control can be applied directly to the 4 EN (enable) pins to provide brightness control. When enabled, the charge pump, which uses a small ceramic bucket capacitor between C1Pand C1N, operates to regulate the VOUTwith a clamping voltage at typ. 5 V. The tiny QFN20 (1.8x3.2 mm) package allows the device to be also used for applications with space limitations.

This very high voltage N-channel Power MOSFET is designed using MDmesh™ K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency.

Using the well consolidated high voltage MESH OVERLAY™ process, STMicroelectronics has designed an advanced family of very high voltage Power MOSFETs with outstanding performances. The strengthened layout coupled with the company’s proprietary edge termination structure, gives the lowest RDS(on)per area, unrivalled gate charge and switching characteristics.

This very high voltage N-channel Power MOSFET is designed using MDmesh K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency.