STP4NK80Z Series

N-channel 800 V, 2.7 Ohm typ., 3 A SuperMESH Power MOSFET in a TO-220 package

Catalog

N-channel 800 V, 2.7 Ohm typ., 3 A SuperMESH Power MOSFET in a TO-220 package

Part	Power Dissipation (Max) [Max]	Gate Charge (Qg) (Max) @ Vgs	Package / Case	Vgs (Max)	Drive Voltage (Max Rds On, Min Rds On)	Operating Temperature [Max]	Operating Temperature [Min]	Current - Continuous Drain (Id) @ 25°C	FET Type	Supplier Device Package	Input Capacitance (Ciss) (Max) @ Vds	Mounting Type	Drain to Source Voltage (Vdss)	Technology	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id
STMicroelectronics STP4NK80Z	80 W	22.5 nC	TO-220-3	30 V	10 V	150 °C	-55 °C	3 A	N-Channel	TO-220	575 pF	Through Hole	800 V	MOSFET (Metal Oxide)	3.5 Ohm	4.5 V

Catalog

N-channel 800 V, 2.7 Ohm typ., 3 A SuperMESH Power MOSFET in a TO-220 package

Description

This high-voltage device is a Zener-protected N-channel Power MOSFET developed using the SuperMESH technology by STMicroelectronics, an optimization of the well-established PowerMESH. In addition to a significant reduction in on-resistance, this device is designed to ensure a high level of dv/dt capability for the most demanding applications.