STP55 Series

N-channel 60 V, 0.015 Ohm, 50 A STripFET(TM) II Power MOSFET in TO-220 package

Catalog

N-channel 60 V, 0.015 Ohm, 50 A STripFET(TM) II Power MOSFET in TO-220 package

Part	Drive Voltage (Max Rds On, Min Rds On)	Current - Continuous Drain (Id) @ 25°C	Supplier Device Package	Drain to Source Voltage (Vdss)	Input Capacitance (Ciss) (Max) @ Vds [Max]	Gate Charge (Qg) (Max) @ Vgs	FET Type	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Mounting Type	Vgs (Max)	Operating Temperature [Max]	Operating Temperature [Min]	Technology	Vgs(th) (Max) @ Id	Package / Case	Drive Voltage (Max Rds On, Min Rds On) [Max]	Drive Voltage (Max Rds On, Min Rds On) [Min]	Input Capacitance (Ciss) (Max) @ Vds
STMicroelectronics STP55NF06	10 V	50 A	TO-220	60 V	1300 pF	60 nC	N-Channel	110 W	18 mOhm	Through Hole	20 V	175 °C	-55 °C	MOSFET (Metal Oxide)	4 V	TO-220-3
STMicroelectronics STP55NF06L	5 V 10 V	55 A	TO-220	60 V		37 nC	N-Channel	95 W	18 mOhm	Through Hole	16 V	175 °C	-55 °C	MOSFET (Metal Oxide)	1.7 V	TO-220-3	10 V	5 V	1700 pF

Catalog

N-channel 60 V, 0.015 Ohm, 50 A STripFET(TM) II Power MOSFET in TO-220 package

Description

This Power MOSFET is the latest development of STMicroelectronis unique "Single Feature Size" strip-based process. The resulting transistor shows extremely high packing density for low onresistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.