STGWA50Trench gate field-stop IGBT, 650 V, 50 A soft switching IH series in a TO-247 long leads package | Single | 4 | Active | The newest IGBT 650 V HB2 series represents an evolution of the advanced proprietary trench gate field-stop structure. The performance of the HB2 series is optimized in terms of conduction, thanks to a better VCE(sat) behavior at low current values, as well as in terms of reduced switching energy. A diode used for protection purposes only is co-packaged in antiparallel with the IGBT. The result is a product specifically designed to maximize efficiency for a wide range of fast applications. |
STGWA50M65DF2AGAutomotive-grade trench gate field-stop 650 V, 50 A low-loss M series IGBT in a TO-247 long leads package | Transistors | 1 | Active | This device is an IGBT developed using an advanced proprietary trench gate field-stop structure. The device is part of the M series IGBTs, which represent an optimal balance between inverter system performance and efficiency where the low-loss and the short-circuit functionality is essential. Furthermore, the positive VCE(sat)temperature coefficient and the tight parameter distribution result in safer paralleling operation. |
STGWA60600 V, 60 A very high speed trench gate field-stop IGBT | Single | 2 | Active | These devices are IGBTs developed using an advanced proprietary trench gate field-stop structure. These devices are part of the V series of IGBTs, which represents an optimum compromise between conduction and switching losses to maximize the efficiency of very high frequency converters. Furthermore, positive VCE(sat)temperature coefficient and very tight parameter distribution result in safer paralleling operation. |
STGWA60H65DFBTrench gate field-stop IGBT, HB series 650 V, 60 A high speed | Single IGBTs | 1 | Active | These devices are IGBTs developed using an advanced proprietary trench gate field-stop structure. These devices are part of the new HB series of IGBTs, which represent an optimum compromise between conduction and switching loss to maximize the efficiency of any frequency converter. Furthermore, the slightly positive VCE(sat) temperature coefficient and very tight parameter distribution result in safer paralleling operation. |
STGWA75H65DFB2Trench gate field-stop, 650 V, 75 A, high-speed HB2 series IGBT in a TO-247 long leads package | Single IGBTs | 1 | Active | The newest IGBT 650 V HB2 series represents an evolution of the advanced proprietary trench gate field-stop structure. The performance of the HB2 series is optimized in terms of conduction, thanks to a better VCE(sat)behavior at low current values, as well as in terms of reduced switching energy. A very fast soft recovery diode is co-packaged in antiparallel with the IGBT. The result is a product specifically designed to maximize efficiency for a wide range of fast applications. |
STGWA75M65DF2Trench gate field-stop IGBT M series, 650 V 75 A low loss | Single IGBTs | 1 | Active | These devices are IGBTs developed using an advanced proprietary trench gate field-stop structure. The devices are part of the M series IGBTs, which represent an optimal balance between inverter system performance and efficiency where low-loss and short-circuit functionality are essential. Furthermore, the positive VCE(sat)temperature coefficient and tight parameter distribution result in safer paralleling operation. |
STGWA80Trench gate field-stop 650 V, 80 A high speed HB series IGBT | Single IGBTs | 1 | Obsolete | This device is an IGBT developed using an advanced proprietary trench gate field-stop structure. The device is part of the new HB series of IGBTs, which represents an optimum compromise between conduction and switching loss to maximize the efficiency of any frequency converter. Furthermore, the slightly positive VCE(sat)temperature coefficient and very tight parameter distribution result in safer paralleling operation. |
STGWA80H65DFBAGAutomotive-grade trench gate field-stop 650 V, 80 A high speed HB series IGBT in a TO-247 long leads package | Discrete Semiconductor Products | 1 | Active | This device is an IGBT developed using an advanced proprietary trench gate field-stop structure. The device is part of the new HB series of IGBTs, which represents an optimum compromise between conduction and switching loss to maximize the efficiency of any frequency converter. Furthermore, the slightly positive VCE(sat)temperature coefficient and very tight parameter distribution result in safer paralleling operation. |
STGWA80H65FBTrench gate field-stop IGBT, HB series 650 V, 80 A high speed | Single IGBTs | 1 | Active | This device is an IGBT developed using an advanced proprietary trench gate field-stop structure. The device is part of the new HB series of IGBTs, which represents an optimum compromise between conduction and switching loss to maximize the efficiency of any frequency converter. Furthermore, the slightly positive VCE(sat) temperature coefficient and very tight parameter distribution result in safer paralleling operation. |
| Discrete Semiconductor Products | 1 | Active | This device utilizes the advanced PowerMESH process resulting in an excellent trade-off between switching performance and low on-state behavior. |
