STGWT20Trench gate field-stop 650 V, 20 A high speed HB series IGBT | Discrete Semiconductor Products | 2 | Active | This device is an IGBT developed using an advanced proprietary trench gate field-stop structure. The device is part of the new HB series of IGBTs, which represents an optimum compromise between conduction and switching loss to maximize the efficiency of any frequency converter. Furthermore, the slightly positive VCE(sat)temperature coefficient and very tight parameter distribution result in safer paralleling operation. |
| IGBTs | 1 | Active | |
STGWT30Trench gate field-stop 600 V, 30 A high speed HB series IGBT | Single | 3 | Active | These devices are IGBTs developed using an advanced proprietary trench gate field-stop structure. These devices are part of the new HB series of IGBTs, which represent an optimum compromise between conduction and switching loss to maximize the efficiency of any frequency converter. Furthermore, the slightly positive VCE(sat)temperature coefficient and very tight parameter distribution result in safer paralleling operation. |
STGWT30HP65FBTrench gate field-stop 650 V, 30 A high speed HB series IGBT | Discrete Semiconductor Products | 1 | LTB | This device is an IGBT developed using an advanced proprietary trench gate field-stop structure. The device is part of the new HB series of IGBTs, which represents an optimum compromise between conduction and switching loss to maximize the efficiency of any frequency converter. Furthermore, the slightly positive VCE(sat)temperature coefficient and very tight parameter distribution result in safer paralleling operation. |
| Single | 2 | Obsolete | |
STGWT40H65DFBTrench gate field-stop 650 V, 40 A high speed HB series IGBT | IGBTs | 1 | Active | This device is an IGBT developed using an advanced proprietary trench gate field-stop structure. The device is part of the new HB series of IGBTs, which represents an optimum compromise between conduction and switching loss to maximize the efficiency of any frequency converter. Furthermore, the slightly positive VCE(sat)temperature coefficient and very tight parameter distribution result in safer paralleling operation. |
| Single IGBTs | 3 | Active | |
STGWT60H65DFBTrench gate field-stop IGBT, HB series 650 V, 60 A high speed | Transistors | 1 | Active | These devices are IGBTs developed using an advanced proprietary trench gate field-stop structure. These devices are part of the new HB series of IGBTs, which represent an optimum compromise between conduction and switching loss to maximize the efficiency of any frequency converter. Furthermore, the slightly positive VCE(sat) temperature coefficient and very tight parameter distribution result in safer paralleling operation. |
| Transistors | 1 | Active | |
| IGBTs | 1 | Active | Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has designed an advanced family of IGBTs, the PowerMESH™ IGBTs, with outstanding performances. The suffix "V" identifies a family optimized for very high frequency applications. |
