STGWA80H65FB Series

Trench gate field-stop IGBT, HB series 650 V, 80 A high speed

Catalog

Trench gate field-stop IGBT, HB series 650 V, 80 A high speed

Part	Package / Case	Td (on/off) @ 25°C [Max]	Td (on/off) @ 25°C [Min]	IGBT Type	Voltage - Collector Emitter Breakdown (Max) [Max]	Operating Temperature [Max]	Operating Temperature [Min]	Gate Charge	Vce(on) (Max) @ Vge, Ic	Test Condition	Mounting Type	Current - Collector Pulsed (Icm)	Switching Energy	Supplier Device Package	Current - Collector (Ic) (Max) [Max]	Power - Max [Max]
STMicroelectronics STGWA80H65FB	TO-247-3	280 ns	84 ns	Trench Field Stop	650 V	175 °C	-55 °C	414 nC	2 V	10 Ohm 15 V 80 A 400 V	Through Hole	240 A	1.5 mJ 2.1 mJ	TO-247 Long Leads	120 A	469 W

Catalog

Trench gate field-stop IGBT, HB series 650 V, 80 A high speed

Description

This device is an IGBT developed using an advanced proprietary trench gate field-stop structure. The device is part of the new HB series of IGBTs, which represents an optimum compromise between conduction and switching loss to maximize the efficiency of any frequency converter. Furthermore, the slightly positive VCE(sat) temperature coefficient and very tight parameter distribution result in safer paralleling operation.