STGWA75M65DF2 Series
Trench gate field-stop IGBT M series, 650 V 75 A low loss
Manufacturer: STMicroelectronics
Catalog
Trench gate field-stop IGBT M series, 650 V 75 A low loss
| Part | Current - Collector Pulsed (Icm) | Supplier Device Package | Switching Energy | Test Condition | Reverse Recovery Time (trr) | Package / Case | Vce(on) (Max) @ Vge, Ic | Gate Charge | Operating Temperature [Max] | Operating Temperature [Min] | IGBT Type | Power - Max [Max] | Mounting Type | Voltage - Collector Emitter Breakdown (Max) [Max] | Current - Collector (Ic) (Max) [Max] | Td (on/off) @ 25°C [custom] | Td (on/off) @ 25°C [custom] |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 STMicroelectronics | 225 A | TO-247 Long Leads | 2.54 mJ 690 µJ | 3.3 Ohm 15 V 75 A 400 V | 165 ns | TO-247-3 | 2.1 V | 225 nC | 175 °C | -55 °C | Trench Field Stop | 468 W | Through Hole | 650 V | 120 A | 47 ns | 125 ns |
Description
AI
These devices are IGBTs developed using an advanced proprietary trench gate field-stop structure. The devices are part of the M series IGBTs, which represent an optimal balance between inverter system performance and efficiency where low-loss and short-circuit functionality are essential. Furthermore, the positive VCE(sat)temperature coefficient and tight parameter distribution result in safer paralleling operation.