| IGBTs | 1 | Active | |
STGWA30M65DF2AGAutomotive-grade trench gate field-stop 650 V, 30 A low-loss M series IGBT in a TO-247 long leads package | Single IGBTs | 1 | Active | This device is an IGBT developed using an advanced proprietary trench gate field-stop structure. The device is part of the M series IGBTs, which represent an optimal balance between inverter system performance and efficiency where the low-loss and the short-circuit functionality is essential. |
STGWA35IH135DF2Trench gate field-stop 1350 V, 35 A, soft-switching IH2 series IGBT in a TO-247 long leads package | Single IGBTs | 1 | Active | The newest IGBT 1350 V IH2 series has been developed using an advanced proprietary trench gate field-stop structure, whose performance is optimized both in conduction and switching losses for soft commutation. A freewheeling diode with a low drop forward voltage is included. The result is a product specifically designed to maximize efficiency for any resonant and soft-switching applications. |
STGWA40Trench gate field-stop 650 V, 40 A, soft-switching IH series IGBT in a TO-247 long leads package | Single | 5 | Active | These devices are IGBTs developed using an advanced proprietary trench gate field-stop structure. These devices are part of the H series of IGBTs, which represents an optimum compromise between conduction and switching losses to maximize the efficiency of high switching frequency converters. Furthermore, a slightly positive VCE(sat)temperature coefficient and very tight parameter distribution result in safer paralleling operation. |
STGWA40H120F2Trench gate field-stop IGBT, H series 1200 V, 40 A high speed | Transistors | 1 | Active | These devices are IGBTs developed using an advanced proprietary trench gate field-stop structure. These devices are part of the H series of IGBTs, which represent an optimum compromise between conduction and switching losses to maximize the efficiency of high switching frequency converters. Moreover, a slightly positive VCE(sat)temperature coefficient and very tight parameter distribution result in safer paralleling operation. |
STGWA40H65DFB2Trench gate field-stop, 650 V, 40 A, high-speed HB2 series IGBT in a TO-247 long leads package | Discrete Semiconductor Products | 1 | Active | The newest IGBT 650 V HB2 series represents an evolution of the advanced proprietary trench gate field-stop structure. The performance of the HB2 series is optimized in terms of conduction, thanks to a better VCE(sat) behavior at low current values, as well as in terms of reduced switching energy. A very fast soft recovery diode is co-packaged in antiparallel with the IGBT. The result is a product specifically designed to maximize efficiency for a wide range of fast applications. |
STGWA40HP65FBTrench gate field-stop 650 V, 40 A high-speed HB series IGBT | Discrete Semiconductor Products | 1 | Active | This device is an IGBT developed using an advanced proprietary trench gate field-stop structure. The device is part of the new HB series of IGBTs, which represents an optimum compromise between conduction and switching loss to maximize the efficiency of any frequency converter. Furthermore, the slightly positive VCE(sat) temperature coefficient and very tight parameter distribution result in safer paralleling operation. |
STGWA40HP65FB2Trench gate field-stop, 650 V, 40 A, high-speed HB2 series IGBT in a TO-247 long leads package | IGBTs | 1 | Active | The newest IGBT 650 V HB2 series represents an evolution of the advanced proprietary trench gate field-stop structure. The performance of the HB2 series is optimized in terms of conduction, thanks to a better VCE(sat)behavior at low current values, as well as in terms of reduced switching energy. A diode used for protection purposes only is co-packaged in antiparallel with the IGBT. The result is a product specifically designed to maximize efficiency for a wide range of fast applications. |
STGWA40M120DF3Trench gate field-stop IGBT, M series 1200 V, 40 A low loss | Single IGBTs | 1 | Active | This device is an IGBT developed using an advanced proprietary trench gate field-stop structure. The device is part of the M series of IGBTs, which represent an optimum compromise in performance to maximize the efficiency of inverter systems where low-loss and short circuit capability are essential. Furthermore, a positive VCE(sat)temperature coefficient and tight parameter distribution result in safer paralleling operation. |
| Discrete Semiconductor Products | 1 | Obsolete | |
